Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy von MURAMATSU, Yasuji, IIHARA, Junji, TAKEBE, Toshihiko, DENLINGER, Jonathan D.

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Element-Selective Observation of Electronic Structure Transition between Semiconducting and Metallic States in Boron-Doped Diamond Using Soft X-ray Emission and Absorption Spectros... von Iihara, Junji, Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Namba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D., Perera, Rupert C. C.

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Development of a laser chipping technique combined with water jet for retrieval of fuel debris at Fukushima Daiichi Nuclear Power Station von Yamada, Tomonori, Takebe, Toshihiko, Ishizuka, Ippei, Daido, Hiroyuki, Hanari, Toshihide, Shibata, Takuya, Ohmori, Shinya, Kurosawa, Koichi, Sasaki, Go, Nakada, Masahiro, Sakai, Hideaki

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Electrical characterization of lateral P-N junctions grown on (111)A GaAs nonplanar substrates by molecular beam epitaxy von INAI, M, YAMAMOTO, T, FUJII, M, TAKEBE, T, KOBAYASHI, K

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Electroluminescence from lateral P-N junctions grown on (111)A GaAs patterned substrates von INAI, M, YAMAMOTO, T, TAKEBE, T, WATANABE, T

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Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Wells on (111)A Patterned Substrates von Yamamoto, Teiji, Inai, Makoto, Hosoda, Makoto, Toshihiko Takebe, Toshihiko Takebe, Toshihide Watanabe, Toshihide Watanabe

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Lateral P-N subband junctions fabricated on patterned substrates von YAMAMOTO, T, INAI, M, TAKEBE, T, WATANABE, T

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Low diffusivity of dopants in (111)A GaAs von SHINODA, A, YAMAMOTO, T, INAI, M, TAKEBE, T, WATANABE, T

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Substrate misorientation effects on silicon-doped AlGaAs layers grown on GaAs(111)A by molecular beam epitaxy von FUJITA, K, YAMAMOTO, T, TAKEBE, T, WATANABE, T

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TITANIUM GOLD SCHOTTKY CONTACTS ON P-TYPE GAAS GROWN ON (111)A AND (100) GAAS SUBSTRATES USING MOLECULAR-BEAM EPITAXY von LOVELL, DR, YAMAMOTO, T, INAI, M, TAKEBE, T, KOBAYASHI, K

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Misorientation dependence of crystal structures and electrical properties of Si-doped AlAS grown on (111)A GaAs by molecular beam epitaxy von YAMAMOTO, T, INAI, M, SHINODA, A, TAKEBE, T, WATANABE, T

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Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates von Yoshida, Hiroaki, Kiyama, Makoto, Takebe, Toshihiko, Keiichiro Fujita, Keiichiro Fujita, Shin-ichi Akai, Shin-ichi Akai

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Low resistance NiAuGe/Au ohmic contacts on N-type (111)A GaAs von LOVELL, D. R, TAKEBE, T, YAMAMOTO, T, INAI, M, KOBAYASHI, K, WATANABE, T

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ESTIMATION OF THE SURFACE-STATE DENSITY OF N-TYPE (111)A GAAS GROWN USING MOLECULAR-BEAM EPITAXY von LOVELL, DR, TAKEBE, T, YAMAMOTO, T, INAI, M, KOBAYASHI, K, WATANABE, T

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Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xa calculations von Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D, Perera, Rupert C C

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Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xalpha calculations von Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D, Perera, Rupert C C

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Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration von Matsuura, Hideharu, Morizono, Tatsuya, Inoue, Yuuki, Kagamihara, Sou, Namba, Akihiko, Imai, Takahiro, Takebe, Toshihiko

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Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xα calculations von Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D., Perera, Rupert C. C.

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ZnSe-based white LED von Takebe, T.

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Large Area VPE GaAs Wafers with Excellent Uniformity on Mass-Production Scale for Microwave IC Applications von TAKEBE, Toshihiko, MIURA, Yoshiki, TAKEMOTO, Kikurou, SHIRAKAWA, Tsuguru, MURAI, Shigeo

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