Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier von Kikkawa, Toshihide

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High performance and high reliability AlGaN/GaN HEMTs von Kikkawa, Toshihide, Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Imanishi, Kenji, Hara, Naoki, Joshin, Kazukiyo

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Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors von Ozaki, Shiro, Ohki, Toshihiro, Kanamura, Masahito, Okamoto, Naoya, Kikkawa, Toshihide

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New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor von Ishiguro, Tetsuro, Yamada, Atsushi, Kotani, Junji, Nakamura, Norikazu, Kikkawa, Toshihide, Watanabe, Keiji, Imanishi, Kenji

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Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications von Kikkawa, Toshihide, Kanamura, Masahito, Ohki, Toshihiro, Imanishi, Kenji, Watanabe, Keiji, Joshin, Kazukiyo

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GaN single-chip transceiver frontend MMIC for X-band applications von Masuda, Satoshi, Yamada, Masao, Kamada, Youichi, Ohki, Toshihiro, Makiyama, Kozo, Okamoto, Naoya, Imanishi, Kenji, Kikkawa, Toshihide, Shigematsu, Hisao

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Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics von Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Yamada, A., Hara, N.

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Suppression of current collapse for millimeter-wave GaN-HEMTs von Yamada, Atsushi, Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Joshin, Kazukiyo, Imanishi, Kenji, Hara, Naoki, Kikkawa, Toshihide

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Reliability of GaN HEMTs: current status and future technology von Ohki, T., Kikkawa, T., Inoue, Y., Kanamura, M., Okamoto, N., Makiyama, K., Imanishi, K., Shigematsu, H., Joshin, K., Hara, N.

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Tensile strain-induced formation of micro-cracks for AlGaN/GaN heterostructures von Kotani, Junji, Tomabechi, Shuichi, Miyajima, Toyoo, Nakamura, Norikazu, Kikkawa, Toshihide, Watanabe, Keiji, Imanishi, Kenji

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Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs von Kikkawa, Toshihide, Okamoto, Naoya, Nara, Naoki, Imanishi, Kenji

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An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure von Ohki, Toshihiro, Kikkawa, Toshihide, Kanamura, Masahito, Imanishi, Kenji, Makiyama, Kozo, Okamoto, Naoya, Joshin, Kazukiyo, Hara, Naoki

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Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- [Formula Omitted] Gate Dielectrics von Kanamura, Masahito, Ohki, Toshihiro, Kikkawa, Toshihide, Imanishi, Kenji, Imada, Tadahiro, Yamada, Atsushi, Hara, Naoki

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Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs von Okamoto, Naoya, Imanishi, Kenji, Kikkawa, Toshihide, Nara, Naoki

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High‐ f max GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications von Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Imanishi, Kenji, Hara, Naoki, Kikkawa, Toshihide

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Over 10W C-Ku band GaN MMIC non-uniform distributed power amplifier with broadband couplers von Masuda, Satoshi, Akasegawa, Akihiko, Ohki, Toshihiro, Makiyama, Kozo, Okamoto, Naoya, Imanishi, Kenji, Kikkawa, Toshihide, Shigematsu, Hisao

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High-power GaN-HEMT with low current collapse for millimeter-wave amplifier von Makiyama, Kozo, Ohki, Toshihiro, Okamoto, Naoya, Kanamura, Masahito, Masuda, Satoshi, Nakasha, Yasuhiro, Joshin, Kazukiyo, Imanishi, Kenji, Hara, Naoki, Ozaki, Shiro, Nakamura, Norikazu, Kikkawa, Toshihide

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Development of High-Efficiency GaN-HEMT Amplifier for Mobile WiMAX von Kikkawa, Toshihide, Iwai, Taisuke, Ohki, Toshihiro

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Compound Semiconductor Device and Manufacturing Method of the Same von Kikkawa, Toshihide

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High-power GaN-HEMT with high three-terminal breakdown voltage for W-band applications von Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Joshin, Kazukiyo, Imanishi, Kenji, Hara, Naoki, Kikkawa, Toshihide

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