(Invited) Characterization of Interface Defects by the Charge Pumping Technique von Tsuchiya, Toshiaki

Volltext

Interactions between Interface Traps in Electron Capture/Emission Processes: Deviation from Charge Pumping Current Based on the Shockley--Read--Hall Theory von Tsuchiya, Toshiaki

Volltext

High performance thin-film transistors fabricated on a single crystal Si strip by micro-chevron laser beam scanning method von Yeh, Wenchang, Hirasue, Mitsuki, Ohtoge, Kaisei, Tsuchiya, Toshiaki

Volltext

Analysis of electron capture process in charge pumping sequence using time domain measurements von Hori, Masahiro, Watanabe, Tokinobu, Tsuchiya, Toshiaki, Ono, Yukinori

Volltext

Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current von Hori, Masahiro, Watanabe, Tokinobu, Tsuchiya, Toshiaki, Ono, Yukinori

Volltext

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory von Tsuchiya, Toshiaki, Lenahan, Patrick M.

Volltext

Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor von Hori, Masahiro, Tsuchiya, Toshiaki, Ono, Yukinori

Volltext

Time-domain charge pumping on silicon-on-insulator MOS devices von Watanabe, Tokinobu, Hori, Masahiro, Tsuchiya, Toshiaki, Fujiwara, Akira, Ono, Yukinori

Volltext

Evaluation of Accuracy of Charge Pumping Current in Time Domain von WATANABE, Tokinobu, HORI, Masahiro, SARUWATARI, Taiki, TSUCHIYA, Toshiaki, ONO, Yukinori

Volltext

Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal--Oxide--Semiconductor Field-Effect Transistors von Hu, Ming, Tsuchiya, Toshiaki

Volltext

Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors von Hu, Ming, Tsuchiya, Toshiaki

Volltext

(Invited) Single Defect Characterization at Si/SiO 2 Interface von Tsuchiya, Toshiaki

Volltext

(Invited) Single Defect Characterization at Si/SiO2 Interface von Tsuchiya, Toshiaki

Volltext

The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal--Oxide--Semiconductor Field-Effect Transistors von Hu, Ming, Yamane, Takuya, Tsuchiya, Toshiaki

Volltext

(Invited) Characterization of Individual Si/SiO 2 Interface Traps: Direct Observation of Single P b0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP... von Tsuchiya, Toshiaki

Volltext

Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method von Tsuchiya, Toshiaki, Ono, Yukinori

Volltext

The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors von Hu, Ming, Yamane, Takuya, Tsuchiya, Toshiaki

Volltext

(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs von Tsuchiya, Toshiaki, Tamura, Naoyoshi, Sakakidani, Akihito, Sonoda, Kenichiro, Kamei, Masayuki, Yamakawa, Shinya, Kuwabara, Sumio

Volltext

Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal--Oxide--Semiconductor Field-Effect Transistors von Tsuchiya, Toshiaki, Mori, Yuki, Morimura, Yuta, Mogami, Tohru, Ohji, Yuzuru

Volltext

Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating von Tsuchiya, Toshiaki, Tsuboi, Shinzo, Kawachi, Genshiro, Matsumura, Masakiyo

Volltext