Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack von Li, Xiuyan, Toriumi, Akira

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Kinetic pathway of the ferroelectric phase formation in doped HfO2 films von Xu, Lun, Nishimura, Tomonori, Shibayama, Shigehisa, Yajima, Takeaki, Migita, Shinji, Toriumi, Akira

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Origin of electric dipoles formed at high-k/SiO2 interface von Kita, Koji, Toriumi, Akira

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Study of SiGe oxidation kinetics for preferential SiO2 formation under a low O2 pressure condition von Song, Woojin, Toriumi, Akira

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Polarization switching in thin doped HfO2 ferroelectric layers von Materano, Monica, Lomenzo, Patrick D., Mulaosmanovic, Halid, Hoffmann, Michael, Toriumi, Akira, Mikolajick, Thomas, Schroeder, Uwe

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Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2 von Shibayama, Shigehisa, Nishimura, Tomonori, Migita, Shinji, Toriumi, Akira

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Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm von Tian, Xuan, Shibayama, Shigehisa, Nishimura, Tomonori, Yajima, Takeaki, Migita, Shinji, Toriumi, Akira

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Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface von Nishimura, Tomonori, Kita, Koji, Toriumi, Akira

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Reaction of GeO2 with Ge and crystallization of GeO2 on Ge von Xie, Min, Nishimura, Tomonori, Yajima, Takeaki, Toriumi, Akira

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Interface reaction kinetics in SiGe oxidation von Li, Xiuyan, Noma, Yusuke, Song, Woojin, Nishimura, Tomonori, Toriumi, Akira

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Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics von Migita, Shinji, Ota, Hiroyuki, Yamada, Hiroyuki, Shibuya, Keisuke, Sawa, Akihito, Toriumi, Akira

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Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors von Nagashio, Kosuke, Toriumi, Akira

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Ferroelectric phase stabilization of HfO2 by nitrogen doping von Xu, Lun, Nishimura, Tomonori, Shibayama, Shigehisa, Yajima, Takeaki, Migita, Shinji, Toriumi, Akira

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Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates von Migita, Shinji, Ota, Hiroyuki, Asanuma, Shutaro, Morita, Yukinori, Toriumi, Akira

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Impacts of oxygen passivation on poly-crystalline germanium thin film transistor von Kabuyanagi, Shoichi, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

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Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium von Schroeder, Uwe, Materano, Monica, Mittmann, Terence, Lomenzo, Patrick D., Mikolajick, Thomas, Toriumi, Akira

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Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks von Nishimura, Tomonori, Xu, Lun, Shibayama, Shigehisa, Yajima, Takeaki, Migita, Shinji, Toriumi, Akira

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(Invited) Opportunities of High Performance Ge CMOS von Toriumi, Akira

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Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition von Yajima, Takeaki, Toriumi, Akira

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Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments von Migita, Shinji, Ota, Hiroyuki, Shibuya, Keisuke, Yamada, Hiroyuki, Sawa, Akihito, Matsukawa, Takashi, Toriumi, Akira

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