Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs von Malmros, Anna, Gamarra, Piero, Di Forte-Poisson, Marie-Antoinette, Hjelmgren, Hans, Lacam, Cedric, Thorsell, Mattias, Tordjman, Maurice, Aubry, Raphael, Rorsman, Niklas

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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure von Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-Antoinette

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The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures von Gamarra, Piero, Lacam, Cedric, Magis, Michelle, Tordjman, Maurice, Poisson, Marie-Antoinette di Forte

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Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices von Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Splettstösser, Jörg, Schauwecker, Bernd, di Forte-Poisson, Marie-Antoinette

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In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs von Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Medjdoub, Farid, di Forte-Poisson, Marie-Antoinette

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design von Bisi, Davide, Chini, Alessandro, Soci, Fabio, Stocco, Antonio, Meneghini, Matteo, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, di-Forte-Poisson, Marie-Antoinette, Meneghesso, Gaudenzio, Zanoni, Enrico

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Effects of Surface Passivation and Deposition Methods on the 1/ f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors von Do, Thanh Ngoc Thi, Malmros, Anna, Gamarra, Piero, Lacam, Cedric, Di Forte-Poisson, Marie-Antoinette, Tordjman, Maurice, Horberg, Mikael, Aubry, Raphael, Rorsman, Niklas, Kuylenstierna, Dan

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Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation von Malmros, Anna, Gamarra, Piero, Thorsell, Mattias, Forte-Poisson, Marie-Antoinette di, Lacam, Cedric, Tordjman, Maurice, Aubry, Raphaël, Zirath, Herbert, Rorsman, Niklas

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InAlGaN/GaN HEMTs at Cryogenic Temperatures von Dogmus, Ezgi, Kabouche, Riad, Lepilliet, Sylvie, Linge, Astrid, Zegaoui, Malek, Ben-Ammar, Hichem, Chauvat, Marie-Pierre, Ruterana, Pierre, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, Medjdoub, Farid

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The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys von GAMARRA, Piero, LACAM, Cedric, MAGIS, Michelle, TORDJMAN, Maurice, DI FORTE POISSON, Marie-Antoinette

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.

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LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices von Di Forte-Poisson, Marie-Antoinette, Magis, M., Tordjman, Maurice, Aubry, Raphaël, Sarazin, Nicolas, Peschang, M., Morvan, Erwan, Delage, Sylvain Laurent, Di Persio, J., Quere, R., Grimbert, B., Hoel, Virginie, Delos, E., Ducatteau, Damien, Gaquière, Christophe

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Comparison of effective regurgitant orifice area by the PISA method and tricuspid coaptation gap measurement to identify very severe tricuspid regurgitation and stratify mortality... von Bohbot, Yohann, Tordjman, Léa, Dreyfus, Julien, Le Tourneau, Thierry, Lavie-Badie, Yoan, Selton-Suty, Christine, Elegamandji, Benjamin, L'official, Guillaume, Fraix, Antoine, Aghezzaf, Samy, Turgeon, Pierre Yves, Messika Zeitoun, David, Enriquez-Sarano, Maurice, Coisne, Augustin, Donal, Erwan, Tribouilloy, Christophe

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Zoledronic acid and risedronate in the prevention and treatment of glucocorticoid-induced osteoporosis (HORIZON): a multicentre, double-blind, double-dummy, randomised controlled t... von Reid, David M, Prof, Devogelaer, Jean-Pierre, Prof, Saag, Kenneth, Prof, Roux, Christian, Prof, Lau, Chak-Sing, Prof, Reginster, Jean-Yves, Prof, Papanastasiou, Philemon, PhD, Ferreira, Alberto, PhD, Hartl, Florian, MD, Fashola, Taiwo, PhD, Mesenbrink, Peter, PhD, Sambrook, Philip N, Prof

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