Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements von Reklaitis, I., Nippert, F., Kudžma, R., Malinauskas, T., Karpov, S., Pietzonka, I., Lugauer, H. J., Strassburg, M., Vitta, P., Tomašiūnas, R., Hoffmann, A.

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Development of polarity inversion in a GaN waveguide structure for modal phase matching von Kolenda, M., Kezys, D., Reklaitis, I., Radiunas, E., Ritasalo, R., Kadys, A., Grinys, T., Malinauskas, T., Stanionytė, S., Skapas, M., Petruškevičius, R., Tomašiūnas, R.

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A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser von Jelmakas, E, Kadys, A, Malinauskas, T, Paipulas, D, Dobrovolskas, D, Dmukauskas, M, Selskis, A, Juodkazis, S, Tomaši nas, R

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Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition von Kadys, A., Malinauskas, T., Grinys, T., Dmukauskas, M., Mickevičius, J., Aleknavičius, J., Tomašiūnas, R., Selskis, A., Kondrotas, R., Stanionytė, S., Lugauer, H., Strassburg, M.

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Aluminum Oxide Photonic Crystals Grown by a New Hybrid Method von Mikulskas, I., Juodkazis, S., Tomas̆iūnas, R., Dumas, J. G.

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Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211―1285 nm von JELMAKAS, E, TOMASIUNAS, R, VENGRIS, M, RAFAILOV, E, KRESTNIKOV, I

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures von Mickevi ius, J, Andrulevicius, M, Ligor, O, Kadys, A, Tomaši nas, R, Tamulaitis, G, Pavelescu, E-M

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A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown von Reklaitis, I., Radiunas, E., Malinauskas, T., Stanionytė, S., Juška, G., Ritasalo, R., Pilvi, T., Taeger, S., Strassburg, M., Tomašiūnas, R.

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Green second-harmonic generation in a periodically poled planar GaN waveguide von Kolenda, M., Kezys, D., Grinys, T., Vaitkevičus, A., Kadys, A., Reklaitis, I., Vaičaitis, V., Petruškevičius, R., Tomašiūnas, R.

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Stimulated emission in blue-emitting Si+-implanted SiO2 films? von Luterová, K., Pelant, I., Mikulskas, I., Tomasiunas, R., Muller, D., Grob, J.-J., Rehspringer, J.-L., Hönerlage, B.

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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique von Reklaitis, I., Kudžma, R., Miasojedovas, S., Vitta, P., Žukauskas, A., Tomašiūnas, R., Pietzonka, I., Strassburg, M.

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FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry von Jelmakas, E., Kadys, A., Dmukauskas, M., Grinys, T., Tomašiūnas, R., Dobrovolskas, D., Gervinskas, G., Juodkazis, S., Talaikis, M., Niaura, G.

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Active planar optical waveguide made from luminescent silicon nanocrystals von Valenta, J., Pelant, I., Luterová, K., Tomasiunas, R., Cheylan, S., Elliman, R. G., Linnros, J., Hönerlage, B.

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Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguides von Pelant, I, Tomašiūnas, R, Sirutkaitis, V, Valenta, J, Ostatnický, T, Kůsová, K, Elliman, R G

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GaN growth on Si with rare-earth oxide distributed Bragg reflector structures von Grinys, T., Dargis, R., Kalpakovaitė, A., Stanionytė, S., Clark, A., Arkun, F.E., Reklaitis, I., Tomašiūnas, R.

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Electrochemical synthesis and optical characterization of copper selenide nanowire arrays within the alumina pores von Jagminas, A., Juškėnas, R., Gailiūtė, I., Statkutė, G., Tomašiūnas, R.

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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells von Dmukauskas, M, Kadys, A, Malinauskas, T, Grinys, T, Reklaitis, I, Badokas, K, Skapas, M, Tomaši nas, R, Dobrovolskas, D, Stanionyt, S, Pietzonka, I, Strassburg, M, Lugauer, H-J

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Growth peculiarities of aluminum anodic oxide at high voltages in diluted phosphoric acid von Jagminas, A, Bigelien≐, D, Mikulskas, I, Tomašiūnas, R

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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures von Nomeika, K., Aleksiejūnas, R., Miasojedovas, S., Tomašiūnas, R., Jarašiūnas, K., Pietzonka, I., Strassburg, M., Lugauer, H.-J.

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Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN von Gaubas, E., Kazlauskas, K., Tomašiūnas, R., Vaitkus, J., Žukauskas, A.

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