Trends in infectious spondylitis over 66 years von Tanishima, S., Chikako, T., Tokumitsu, M., Fujiwara, S., Hideki, N.

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Changes in psychological and emotional brain mechanisms are known to occur in chronic pain patients von Tanishima, S., Kotani, Y., Tokumitsu, M., Chikako, T., Fujiwara, S., Hideki, N.

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Prediction of the electron flux environment in geosynchronous orbit using a neural network technique von Kitamura, K., Nakamura, Y., Tokumitsu, M., Ishida, Y., Watari, S.

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3S/mm extrinsic transconductance of InP-based high electron mobility transistor by vertical and lateral scale-down von MATSUZAKI, H, MARUYAMA, T, ENOKI, T, TOKUMITSU, M

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D-band rectangular-waveguide-output uni-travelling-carrier photodiode module von FURUTA, T, ITO, T, MURAMOTO, Y, ITO, H, TOKUMITSU, M, ISHIBASHI, T

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Enhanced Gate Swing in InP HEMTs With High Threshold Voltage by Means of InAlAsSb Barrier von Suemitsu, T., Yokoyama, H., Sugiyama, H., Tokumitsu, M.

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Micromachined coplanar waveguide on GaAs for optoelectronic IC applications von Onodera, K., Akeyoshi, T., Tokumitsu, M.

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Three-dimensional MMIC technology for low-cost millimeter-wave MMICs von Nishikawa, K., Kamogawa, K., Piernas, B., Tokumitsu, M., Sugitani, S., Toyoda, I., Araki, K.

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40 Gbit/s/ch 2 × 2 switch IC using InP HEMTs von KAMITSUNA, H, YAMANE, Y, TOKUMITSU, M, SUGAHARA, H, MURAGUCHI, M

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Fabrication of 0.95Sn-0.05Au solder micro-bumps for flip-chip bonding von ISHII, Takao, AOYAMA, Shinji, TOKUMITSU, Masami

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Pre-amplifier integrated uni-travelling- carrier photodiode module for operation in 120 GHz band von ITO, H, FURUTA, T, HIRATA, A, KOSUGI, T, MURAMOTO, Y, TOKUMITSU, M, NAGATSUMA, T, ISHIBASHI, T

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Novel flip-chip bonding technology for W-band interconnections using alternate lead-free solder bumps von Onodera, K., Ishii, T., Aoyama, S., Sugitani, S., Tokumitsu, M.

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A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's von Murata, K., Otsuji, T., Yoneyama, M., Tokumitsu, M.

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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm g and 500-GHz f von Matsuzaki, H., Maruyama, T., Koasugi, T., Takahashi, H., Tokumitsu, M., Enoki, T.

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A 24-Gsps 3-bit Nyquist ADC using InP HBTs for electronic dispersion compensation von Nosaka, H., Nakamura, M., Ida, M., Kurishima, K., Shibata, T., Tokumitsu, M., Muraguchi, M.

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InP-based IC technologies for 100-Gbit/s and beyond von Murata, K., Sano, K., Enoki, T., Sugahara, H., Tokumitsu, M.

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Folded U-shaped microwire technology for ultra-compact three-dimensional MMICs von Onodera, K., Hirano, M., Tokumitsu, M., Toyoda, I., Nishikawa, K., Tokumitsu, T.

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High-performance 0.1 μm-self-aligned-gate GaAs MESFET technology von Nishimura, K., Onodera, K., Aoyama, S., Tokumitsu, M., Yamasaki, K.

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Design and performance of low-current GaAs MMICs for L-band front-end applications von Imai, Y., Tokumitsu, M., Minakawa, A.

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Low-power InP-HEMT switch ICs integrating miniaturized 2×2 switches for 10-Gb/s systems von KAMITSUNA, Hideki, YAMANE, Yasuro, TOKUMITSU, Masami, SUGAHARA, Hirohiko, MURAGUCHI, Masahiro

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