Various types of nonbridging oxygen hole center in high-purity silica glass von MUNEKUNI, S, YAMANAKA, T, SHIMOGAICHI, Y, TOHMON, R, OHKI, Y, NAGASAWA, K, HAMA, Y

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Defects and optical absorption bands induced by surplus oxygen in high-purity synthetic silica von NISHIKAWA, H, TOHMON, R, OHKI, Y, NAGASAWA, K, HAMA, Y

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Effect of cladding material on 2-eV optical absorption in pure-silica core fibers and method to suppress the absorption von NAGASAWA, K, TOHMON, R, OHKI, Y

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2.7-eV luminescence in as-manufactured high-purity silica glass von Tohmon, R, Shimogaichi, Y, Mizuno, H, Ohki, Y, Nagasawa, K, Hama, Y

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Spatial distribution of defects in high-purity silica glasses von TOHMON, R, IKEDA, A, SHIMOGAICHI, Y, MUNEKUNI, S, NAGASAWA, K, HAMA, Y

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Generation mechanism of photoinduced paramagnetic centers from preexisting precursors in high-purity silicas von NISHIKAWA, H, NAKAMURA, R, TOHMON, R, OHKI, Y, SAKURAI, Y, NAGASAWA, K, HAMA, Y

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METHOD FOR MANUFACTURING A SOLID-STATE OPTICAL ELEMENT DEVICE von HADAME, Kunihiro, OHTSUKA, Masaaki, KATO, Hideaki, AIDA, Kazuya, WATANABE, Hiroki, TOHMON, Ryoichi, OTA, Koichi, SUEHIRO, Yoshinobu, INOUE, Mitsuhiro, WADA, Satoshi, SAWANOBORI, Naruhito, YAMAMOTO, Yoshinori

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Method of making a semiconductor device von Suehiro, Yoshinobu, Sawanobori, Naruhito, Wada, Satoshi, Watanabe, Hiroki, Yamamoto, Yoshinori, Aida, Kazuya, Tohmon, Ryoichi, Hadame, Kunihiro, Kato, Hideaki, Inoue, Mitsuhiro, Ota, Koichi, Ohtsuka, Masaaki

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Method of producing LED lens array von TOHMON, RYOICHI

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Complex-coupled DFB lasers based on a current modulation concept von Tohmon, R., Takahashi, Y., Kikugawa, T.

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Lichtemittierende Vorrichtung von TOHMON, RYOICHI, WADA, SATOSHI, SUEHIRO, YOSHINOBU

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Light emitting device provided with a submount assembly for improved thermal dissipation von Suehiro, Yoshinobu, Tohmon, Ryoichi, Wada, Satoshi

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Cause of the 5.0 ev absorption band in pure silica glass von Tohmon, Ryoichi, Yamasaka, Yoshiya, Nagasawa, Kaya, Ohki, Yoshimichi, Hama, Yoshimasa

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Light emitting device with wavelength converted by phosphor von KATO HIDEAKI, SUEHIRO YOSHINOBU, WADA SATOSHI, TOHMON RYOICHI

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Light emitting device von SUEHIRO YOSHINOBU, WADA SATOSHI, TOHMON RYOICHI

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Light-emitting device e.g. LED, has strain reducing part, e.g. in form of chamfered corners to reduce strain in sealing part von TOHMON, RYOICHI, WADA, SATOSHI, SUEHIRO, YOSHINOBU

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Method of making a semiconductor device von SAWANOBORI, NARUHITO, TOHMON, RYOICHI, YAMAMOTO, YOSHINORI, WADA, SATOSHI, SUEHIRO, YOSHINOBU, INOUE, MITSUHIRO, KATO, HIDEAKI, HADAME, KUNIHIRO, OHTSUKA, MASAAKI, OTA, KOICHI, WATANABE, HIROKI, AIDA, KAZUYA

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Linearizing emitted light intensity from a light-emitting device von TOHMON, RYOICHI, TANAKA, YUKIO

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Linearizing emitted light intensity from a light-emitting device von TOHMON, RYOICHI, TANAKA, YUKIO

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Solid element device and method for manufacturing the same von Suehiro, Yoshinobu, Inoue, Mitsuhiro, Kato, Hideaki, Hadame, Kunihiro, Tohmon, Ryoichi, Wada, Satoshi, Ota, Koichi, Aida, Kazuya, Watanabe, Hiroki, Yamamoto, Yoshinori, Ohtsuka, Masaaki, Sawanobori, Naruhito

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