Using remotely-sensed estimates of soil moisture to infer soil texture and hydraulic properties across a semi-arid watershed von Santanello, Joseph A., Peters-Lidard, Christa D., Garcia, Matthew E., Mocko, David M., Tischler, Michael A., Moran, M. Susan, Thoma, D.P.

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Appropriate scale of soil moisture retrieval from high resolution radar imagery for bare and minimally vegetated soils von Thoma, D.P., Moran, M.S., Bryant, R., Rahman, M.M., Collins, C.D. Holifield, Keefer, T.O., Noriega, R., Osman, I., Skrivin, S.M., Tischler, M.A., Bosch, D.D., Starks, P.J., Peters-Lidard, C.D.

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LUMINESCENCE DEGRADATION IN POROUS SILICON von TISCHLER, MA, COLLINS, RT, STATHIS, JH, TSANG, JC

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Electrochemical investigation of the gallium nitride-aqueous electrolyte interface von KOCHA, S. S, PETERSON, M. W, ARENT, D. J, REDWING, J. M, TISCHLER, M. A, TURNER, J. A

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An optically pumped GaN–AlGaN vertical cavity surface emitting laser von Redwing, Joan M., Loeber, David A. S., Anderson, Neal G., Tischler, Michael A., Flynn, Jeffrey S.

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GaN growth by metallorganic vapor phase epitaxy : A comparison of modeling and experimental measurements von SAFVI, S. A, REDWING, J. M, TISCHLER, M. A, KUECH, T. F

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Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates von Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S., Mitchel, W. C.

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PHOTOINDUCED HYDROGEN LOSS FROM POROUS SILICON von COLLINS, RT, TISCHLER, MA, STATHIS, JH

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Electron–phonon interactions in CsCdBr3:Yb3 von Hehlen, Markus P., Kuditcher, Amos, Rand, Stephen C., Tischler, Michael A.

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Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy von KUECH, T. F, TISCHLER, M. A, WANG, P.-J, SCILLA, G, POTEMSKI, R, CARDONE, F

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RAMAN-SCATTERING FROM H-TERMINATED OR O-TERMINATED POROUS SI von TSANG, JC, TISCHLER, MA, COLLINS, RT

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Raman Scattering in the Intermetallic Compound PtGa2 von Hsu, L.-S., Tischler, M. A.

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A near-field scanning optical microscopy study of the photoluminescence from GaN films von Liu, Jutong, Perkins, N. R., Horton, M. N., Redwing, J. M., Tischler, M. A., Kuech, T. F.

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Stability of visible luminescence from porous silicon von BATSTONE, J. L, TISCHLER, M. A, COLLINS, R. T

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On the relationship of porous silicon and siloxene von Tischler, M.A., Collins, R.T.

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ANISOTROPIC VALENCE BANDS IN QUANTUM-WELLS - QUANTITATIVE COMPARISON OF THEORY AND EXPERIMENT von KASH, JA, ZACHAU, M, TISCHLER, MA, EKENBERG, U

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Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements von GOORSKY, M. S, KUECH, T. F, TISCHLER, M. A, POTEMSKI, R. M

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Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs von KUECH, T. F, TISCHLER, M. A, POTEMSKI, R

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Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs von CALLEGARI, A, SADANA, D. K, BUCHANAN, D. A, PACCAGNELLA, A, MARSHALL, E. D, TISCHLER, M. A, NORCOTT, M

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Self-limiting mechanism in the atomic layer epitaxy of GaAs von TISCHLER, M. A, BEDAIR, S. M

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