Nanorod photonic crystal ring resonators von Timmerman, Dolf, Iwaya, Takenori, Fujiwara, Yasufumi

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High-Q 1D rod-based nanocavities von Timmerman, Dolf, Iwaya, Takenori, Fujiwara, Yasufumi

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Improved Q-factors of III-nitride-based photonic crystal nanocavities by optical loss engineering von Iwaya, Takenori, Ichikawa, Shuhei, Timmerman, Dolf, Tatebayashi, Jun, Fujiwara, Yasufumi

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Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers von Austin, Hayley J., Mitchell, Brandon, Timmerman, Dolf, Tatebayashi, Jun, Ichikawa, Shuhei, Fujiwara, Yasufumi, Dierolf, Volkmar

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An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN von Iwaya, Takenori, Ichikawa, Shuhei, Dierolf, Volkmar, Mitchell, Brandon, Austin, Hayley, Timmerman, Dolf, Tatebayashi, Jun, Fujiwara, Yasufumi

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Droop-free amplified red emission from Eu ions in GaN von Takeo, Atsushi, Ichikawa, Shuhei, Maeda, Shogo, Timmerman, Dolf, Tatebayashi, Jun, Fujiwara, Yasufumi

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Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles von Tatebayashi, Jun, Yamada, Tomoya, Inaba, Tomohiro, Timmerman, Dolf, Ichikawa, Shuhei, Fujiwara, Yasufumi

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Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells von Kojima, Takanori, Takano, Shota, Hasegawa, Ryosuke, Timmerman, Dolf, Koizumi, Atsushi, Funato, Mitsuru, Kawakami, Yoichi, Fujiwara, Yasufumi

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Temporally modulated energy shuffling in highly interconnected nanosystems von Mitchell, Brandon, Austin, Hayley, Timmerman, Dolf, Dierolf, Volkmar, Fujiwara, Yasufumi

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Color-Tunablility in GaN LEDs Based on Atomic Emission Manipulation under Current Injection von Mitchell, Brandon, Wei, Ruoqiao, Takatsu, Junichi, Timmerman, Dolf, Gregorkiewicz, Tom, Zhu, Wanxin, Ichikawa, Shuhei, Tatebayashi, Jun, Fujiwara, Yasufumi, Dierolf, Volkmar

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Direct Visualization and Determination of the Multiple Exciton Generation Rate von Timmerman, Dolf, Matsubara, Eiichi, Gomez, Leyre, Ashida, Masaaki, Gregorkiewicz, Tom, Fujiwara, Yasufumi

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Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy von Arai, Takanori, Timmerman, Dolf, Wakamatsu, Ryuta, Lee, Dong-gun, Koizumi, Atsushi, Fujiwara, Yasufumi

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Resonant energy transfer between Eu luminescent sites and their local geometry in GaN von Timmerman, Dolf, Wakamatsu, Ryuta, Tanaka, Kazuteru, Lee, Dong-gun, Koizumi, Atsushi, Fujiwara, Yasufumi

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ダウンコンバージョンによる太陽電池の変換効率向上を目指したTm,Yb共添加ZnOナノワイヤの作製と光学評価 von 舘林, 潤, 西山, 直登, Timmerman, Dolf, 市川, 修平, 藤原, 康文

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Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut von Ichikawa, Shuhei, Shiomi, Keishi, Morikawa, Takaya, Timmerman, Dolf, Sasaki, Yutaka, Tatebayashi, Jun, Fujiwara, Yasufumi

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IoT社会の発展を支える半導体技術の新展開: ２．希土類添加半導体を用いた超狭帯域発光ダイオードとディスプレイ応用 von 市川, 修平, 稲葉, 智宏, 塩見, 圭史, 舘林, 潤, TIMMERMAN, Dolf, 藤原, 康文

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Er,O共添加GaAsを用いた高Q値 フォトニック結晶ナノ共振器における発光強度増大 von 小川, 雅之, 舘林, 潤, 藤岡, 夏輝, 東, 諒磨, 市川, 修平, 近藤, 正彦, TIMMERMAN, Dolf, 藤原, 康文

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37‐4: Invited Paper: Towards Small, Ultrahigh‐Definition Micro‐LED Displays Using Monolithic Vertically Stacked RGB LEDs von Fujiwara, Yasufumi, Ichikawa, Shuhei, Timmerman, Dolf, Tatebayashi, Jun

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Power-dependent spectral shift of photoluminescence from ensembles of silicon nanocrystals von Timmerman, Dolf, Gregorkiewicz, Tom

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Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder von Iwaya, Takenori, Ichikawa, Shuhei, Murakami, Masato, Timmerman, Dolf, Tatebayashi, Jun, Fujiwara, Yasufumi

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