(Invited) Vertical Nanowire FET Integration and Device Aspects von Veloso, Anabela, Altamirano-Sánchez, Efraín, Brus, Stephan, Chan, B. T., Cupak, Miroslav, Dehan, Morin, Delvaux, Christie, Devriendt, Katia, Eneman, Geert, Ercken, Monique, Huynh-Bao, Trong, Ivanov, Tsvetan, Matagne, Philippe, Merckling, Clement, Paraschiv, Vasile, Ramesh, Siva, Rosseel, Erik, Rynders, Luc, Sibaja-Hernandez, Arturo, Suhard, Samuel, Tao, Zheng, Vecchio, Emma, Waldron, Niamh, Yakimets, Dmitry, De Meyer, Kristin, Mocuta, Dan, Collaert, Nadine, Thean, Aaron

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(Invited) Contacts in Advanced CMOS: History and Emerging Challenges von Lavoie, Christian, Adusumilli, Praneet, Carr, Adra V, Jordan Sweet, Jean S., Ozcan, Ahmet S, Levrau, Elisabeth, Breil, Nicolas, Alptekin, Emre

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Cobalt CMP Development for 7nm Logic Device von Wu, Changhong, Han, Ja-Hyung, Shi, Xingzhao, Koli, Dinesh R, Penigalapati, Dinesh

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(Invited) Laser Annealing in CMOS Manufacturing von Gluschenkov, Oleg, Jagannathan, Hemanth

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(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective von Moens, Peter, Banerjee, Abhishek, Constant, Aurore, Coppens, Peter, Caesar, Markus, Li, Zilan, Vandeweghe, Steven, Declercq, Frederick, Padmanabhan, Balaji, Jeon, Woochul, Guo, Jia, Salih, Ali, Tack, Marnix, Meneghini, Matteo, Dalcanale, Stefano, Tajilli, A, Meneghesso, Gaudenzio, Zanoni, Enrico, Uren, Mike, Chatterjee, Indranil, Karboyan, Serge, Kuball, Martin

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(Invited) Materials and Processes for Superconducting Qubits and Superconducting Electronic Circuits on 300mm Wafers von Papa Rao, Satyavolu S., Hobbs, Christopher, Olson, Stephen, Foroozani, Neda, Chong, Hyuncher, Stamper, Harlan, Martinick, Brian, Ashworth, Dominic, Bunday, Benjamin, Malloy, Matthew, Holland, Eric, Nalaskowski, Jakub, Kearney, Patrick, Ngai, Tat, Wells, Ilyssa, Yakimov, Michael, Oktyabrsky, Serge, O'Brien, Brendan, Kaushik, Vidya, Dunn, Kathleen A, Beckmann, Karsten, Bennett, Stephen, Rodgers, Martin, Murray, Thomas, Novak, Steven, Baker-O'Neal, Brett, Borst, Christopher, Osborn, Kevin D, Liehr, Michael

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(Invited) Complementary III-V Heterojunction Tunnel FETs Monolithically Integrated on Silicon von Convertino, Clarissa, Schmid, Heinz, Czornomaz, Lukas, Riel, Heike, Sant, Saurabh, Schenk, Andreas, Moselund, Kirsten

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(Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires von Mertens, Hans, Ritzenthaler, Romain, Hikavyy, Andriy Yakovitch, Kim, Min-Soo, Tao, Zheng, Wostyn, Kurt, Schram, Tom, Kunnen, Eddy, Ragnarsson, Lars-Åke, Dekkers, Harold F. W., Hopf, Toby, Devriendt, Katia, Tsvetanova, Diana, Chew, Soon Aik, Kikuchi, Yoshiaki, Van Besien, Els, Rosseel, Erik, Mannaert, Geert, De Keersgieter, An, Chasin, Adrian, Kubicek, Stefan, Dangol, Anish, Demuynck, Steven, Barla, Kathy, Mocuta, Dan, Horiguchi, Naoto

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Electrochemical Characterization of Ruthenium Using Potassium Bromate as Oxidizer for Titania-Based CMP Slurry von Yadav, Kavita, Ramachandran, Manivannan, Victoria, Selvam Noyel

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Plasma-Based Copper Etch Process and Reliability von Gao, Baizhen, Gao, Yong, Kuo, Yue, Yuan, Tao

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(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials von Carter, Rick J, Sporer, Ryan, McArdle, Timothy J, Mulfinger, George Robert, Holt, Judson Robert, Beasor, Scott, Child, Amy, Fronheiser, Jody, Wahl, Jeremy A, Geisler, Holm, Kluth, George J, Triyoso, Dina H, Punchihewa, Kasun, Rana, Uzma, Vanamurthy, Laks, Sohn, D K

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(Invited) Enabling On-Device Learning with Deep Spiking Neural Networks for Speech Recognition von Soures, Nicholas, Kudithipudi, Dhireesha, Jacobs-Gedrim, Robin Bay, Agarwal, Sapan, Marinella, Matthew

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Effect of Surface Preparation on the Residual Oxide Thickness and Material Loss of InGaAs Layer von Na, Jihoon, Lim, Sangwoo

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Pinch-Off Plasma CVD Deposition Process and Material Technology for Nano-Device Air Gap/Spacer Formation von Nguyen, Son van, Haigh, Thomas J, Cheng, Kangguo, Penny, C., Park, Chanro, Li, J., Mehta, Sanjay C, Yamashita, Tenko, Jiang, Liying, Canaperi, Don

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(Invited) Beyond CMOS: Memristor and Its Application for Next Generation Storage and Computing von Liu, Chenchen, Liu, Fuqiang, Li, Hai (Helen)

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(Invited) A Nonvolatile SRAM Based on Ferroelectric HfO2 Capacitor for IoT Power Management von Kobayashi, Masaharu, Ueyama, Nozomu, Hiramoto, Toshiro

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(Invited) 2D/3D Tunnel-FET: Toward Green Transistors and Sensors von Cao, W., Kang, J, Banerjee, Kaustav

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Adjustable Silicon Corner Rounding Radius by Wet Technique von Tou, Pei-Ting, Liao, Hsin-Yi, Huang, Hui-Chin, Shih, Kai-Yao, Lu, Ming-Chen

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Improving the Figure-of-Merit of Integrated Solid-State Diodes through the Use of Nanostructured Porous Silicon von Strambini, Lucanos M, Marchesi, Marco, Sambi, Marco, Toia, Fabrizio Fausto Renzo, Mariani, Simone Dario, Morelli, Marco, Barillaro, Giuseppe

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Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate von Lin, Chia-De, Hwu, Jenn-Gwo

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