InSe as a case between 3D and 2D layered crystals for excitons von Shubina, T. V., Desrat, W., Moret, M., Tiberj, A., Briot, O., Davydov, V. Yu, Platonov, A. V., Semina, M. A., Gil, B.

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Determination of light-independent shunt resistance in CIGS photovoltaic cells using a collection function-based model von El Khoury, M., Moret, M., Tiberj, A., Desrat, W.

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Analysis of the gallium gradient in Cu(In1-xGax)Se2 absorbers by X-ray diffraction von Iatosti, C., Moret, M., Tiberj, A., Briot, O.

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Extended Defects in SiC: Selective Etching and Raman Study von Weyher, J. L., Tiberj, A., Nowak, G., Culbertson, J. C., Freitas, J. A.

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition von Michon, A., Tiberj, A., Vézian, S., Roudon, E., Lefebvre, D., Portail, M., Zielinski, M., Chassagne, T., Camassel, J., Cordier, Y.

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Reversible optical doping of graphene von Tiberj, A., Rubio-Roy, M., Paillet, M., Huntzinger, J. -R., Landois, P., Mikolasek, M., Contreras, S., Sauvajol, J. -L., Dujardin, E., Zahab, A. -A.

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC von Portail, M., Michon, A., Vézian, S., Lefebvre, D., Chenot, S., Roudon, E., Zielinski, M., Chassagne, T., Tiberj, A., Camassel, J., Cordier, Y.

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Growth protocols and characterization of epitaxial graphene on SiC elaborated in a graphite enclosure von Kumar, B., Baraket, M., Paillet, M., Huntzinger, J.-R., Tiberj, A., Jansen, A.G.M., Vila, L., Cubuku, M., Vergnaud, C., Jamet, M., Lapertot, G., Rouchon, D., Zahab, A.-A., Sauvajol, J.-L., Dubois, L., Lefloch, F., Duclairoir, F.

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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing von Jabakhanji, B., Michon, A., Consejo, C., Desrat, W., Portail, M., Tiberj, A., Paillet, M., Zahab, A., Cheynis, F., Lafont, F., Schopfer, F., Poirier, W., Bertran, F., Le Fèvre, P., Taleb-Ibrahimi, A., Kazazis, D., Escoffier, W., Camargo, B. C., Kopelevich, Y., Camassel, J., Jouault, B.

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Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors von Teppe, F., Orlov, M., El Fatimy, A., Tiberj, A., Knap, W., Torres, J., Gavrilenko, V., Shchepetov, A., Roelens, Y., Bollaert, S.

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Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction von Iatosti, C., Moret, Matthieu, Tiberj, Antoine, Briot, Olivier

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In-plane propagation of excitonic cavity polaritons von Freixanet, T., Sermage, B., Tiberj, A., Planel, R.

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Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy von Sonde, S., Giannazzo, F., Raineri, V., Yakimova, R., Huntzinger, Jean-Roch, Tiberj, Antoine, Camassel, Jean

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Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN ∕ GaN heterostructures von Lorenzini, P., Bougrioua, Z., Tiberj, A., Tauk, R., Azize, M., Sakowicz, M., Karpierz, K., Knap, W.

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Strain effects in device processing of silicon-on-insulator materials von Camassel, J., Tiberj, A.

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Low electron mobility of field-effect transistor determined by modulated magnetoresistance von Tauk, R., Łusakowski, J., Knap, W., Tiberj, A., Bougrioua, Z., Azize, M., Lorenzini, P., Sakowicz, M., Karpierz, K., Fenouillet-Beranger, C., Cassé, M., Gallon, C., Boeuf, F., Skotnicki, T.

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Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping von Syväjärvi, Mikael, Raineri, Vito, Huntzinger, Jean Roch, Sonde, Sushant, Yakimova, Rositza, Tiberj, Antoine, Camassel, Jean, Giannazzo, Filippo

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Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(In1−xGax) Se2 solar cells von Briot, O., Moret, M., Barbier, C., Tiberj, A., Peyre, H., Sagna, A., Contreras, S.

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Differences between Graphene Grown on Si-Face and C-Face von Camara, Nicolas, Huntzinger, Jean Roch, Mestres, Narcis, Caboni, Alessandra, Godignon, Philippe, Tiberj, Antoine, Camassel, Jean

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Process-induced strain in silicon-on-insulator materials von Tiberj, A, Fraisse, B, Blanc, C, Contreras, S, Camassel, J

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