Comment on “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT” [Appl. Phys. Lett. 120, 172107 (2022)] von Thonke, Klaus

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Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in ZnO von Müller, Raphael, Mangold, Martin, Bauer, Sebastian, Huber, Florian, Herr, Ulrich, Thonke, Klaus

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Fe–Li complex emission in ZnO von Müller, Raphael, Mangold, Martin, Huber, Florian, Schreck, Matthias, Herr, Ulrich, Thonke, Klaus

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Optical signatures of silicon and oxygen related DX centers in AlN von Thonke, Klaus, Lamprecht, Matthias, Collazo, Ramon, Sitar, Zlatko

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Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing von Shahbaz, Jassim, Schneidereit, Martin, Thonke, Klaus, Scholz, Ferdinand

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Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence von Hocker, Matthias, Maier, Pascal, Jerg, Lisa, Tischer, Ingo, Neusser, Gregor, Kranz, Christine, Pristovsek, Markus, Humphreys, Colin J., Leute, Robert A. R., Heinz, Dominik, Rettig, Oliver, Scholz, Ferdinand, Thonke, Klaus

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Mechanism of Optical and Electrical H2S Gas Sensing of Pristine and Surface Functionalized ZnO Nanowires von Kaiser, Angelika, Mauritz, Tanja, Bansmann, Joachim, Biskupek, Johannes, Herr, Ulrich, Thonke, Klaus

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Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells von Naskar, Nilanjon, Schneidereit, Martin F., Huber, Florian, Chakrabortty, Sabyasachi, Veith, Lothar, Mezger, Markus, Kirste, Lutz, Fuchs, Theo, Diemant, Thomas, Weil, Tanja, Behm, R. Jürgen, Thonke, Klaus, Scholz, Ferdinand

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Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation von Schustek, Philipp, Hocker, Matthias, Klein, Martin, Simon, Ulrich, Scholz, Ferdinand, Thonke, Klaus

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Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10 1 ¯ 1 ) semipolar GaN template von Li, Yueliang, Qi, Haoyuan, Meisch, Tobias, Hocker, Matthias, Thonke, Klaus, Scholz, Ferdinand, Kaiser, Ute

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Single-electron transistors based on self-assembled silicon-on-insulator quantum dots von Wolf, Conrad R., Thonke, Klaus, Sauer, Rolf

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Luminescence behavior of semipolar ( 10 1 ¯ 1 ) InGaN/GaN “bow-tie” structures on patterned Si substrates von Bruckbauer, Jochen, Trager-Cowan, Carol, Hourahine, Ben, Winkelmann, Aimo, Vennéguès, Philippe, Ipsen, Anja, Yu, Xiang, Zhao, Xunming, Wallace, Michael J., Edwards, Paul R., Naresh-Kumar, G., Hocker, Matthias, Bauer, Sebastian, Müller, Raphael, Bai, Jie, Thonke, Klaus, Wang, Tao, Martin, Robert W.

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Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample von Hocker, Matthias, Maier, Pascal, Tischer, Ingo, Meisch, Tobias, Caliebe, Marian, Scholz, Ferdinand, Mundszinger, Manuel, Kaiser, Ute, Thonke, Klaus

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GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors von Heinz, Dominik, Huber, Florian, Spiess, Maximilian, Asad, Muhammad, Linyuan Wu, Rettig, Oliver, Donghao Wu, Neuschl, Benjamin, Bauer, Sebastian, Yuzhou Wu, Chakrabortty, Sabyasachi, Hibst, Nicolas, Strehle, Steffen, Weil, Tanja, Thonke, Klaus, Scholz, Ferdinand

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Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE von Rettig, Oliver, Scholz, Jan‐Patrick, Steiger, Natja, Bauer, Sebastian, Hubáček, Tomáš, Zíková, Markéta, Li, Yueliang, Qi, Haoyuan, Biskupek, Johannes, Kaiser, Ute, Thonke, Klaus, Scholz, Ferdinand

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Polarity-controlled ultraviolet/visible light ZnO nanorods/p-Si photodetector von Xie, Yong, Madel, Manfred, Li, Yujie, Jie, Wanqi, Neuschl, Benjamin, Feneberg, Martin, Thonke, Klaus

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Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties von Bickermann, Matthias, Filip, Octavian, Epelbaum, Boris M., Heimann, Paul, Feneberg, Martin, Neuschl, Benjamin, Thonke, Klaus, Wedler, Elke, Winnacker, Albrecht

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Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN von Neuschl, Benjamin, Thonke, Klaus, Feneberg, Martin, Mita, Seiji, Xie, Jinqiao, Dalmau, Rafael, Collazo, Ramón, Sitar, Zlatko

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Negative spin-exchange splitting in the exciton fine structure of AlN von Feneberg, Martin, Fátima Romero, María, Neuschl, Benjamin, Thonke, Klaus, Röppischer, Marcus, Cobet, Christoph, Esser, Norbert, Bickermann, Matthias, Goldhahn, Rüdiger

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Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes von Wunderer, Thomas, Brückner, Peter, Neubert, Barbara, Scholz, Ferdinand, Feneberg, Martin, Lipski, Frank, Schirra, Martin, Thonke, Klaus

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