Moore's law: the future of Si microelectronics von Thompson, Scott E., Parthasarathy, Srivatsan

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Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs von Chu, Min, Sun, Yongke, Aghoram, Umamaheswari, Thompson, Scott E.

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Uniaxial-process-induced strained-Si: extending the CMOS roadmap von Thompson, S.E., Guangyu Sun, Youn Sung Choi, Nishida, T.

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Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon von Baykan, Mehmet O., Thompson, Scott E., Nishida, Toshikazu

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Hole mobility in silicon inversion layers: Stress and surface orientation von Sun, Guangyu, Sun, Yongke, Nishida, Toshikazu, Thompson, Scott E.

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Studying the physical properties of tidal features – I. Extracting morphological substructure in CANDELS observations and VELA simulations von Mantha, Kameswara Bharadwaj, McIntosh, Daniel H, Ciaschi, Cody P, Evan, Rubyet, Ferguson, Henry C, Fries, Logan B, Guo, Yicheng, Koekemoer, Anton M, Landry, Luther D, McGrath, Elizabeth J, Simons, Raymond C, Snyder, Gregory F, Thompson, Scott E, Bell, Eric F, Ceverino, Daniel, Hathi, Nimish P, Pacifici, Camilla, Primack, Joel R, Rafelski, Marc, Rodriguez-Gomez, Vicente

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A 90-nm logic technology featuring strained-silicon von Thompson, S.E., Armstrong, M., Auth, C., Alavi, M., Buehler, M., Chau, R., Cea, S., Ghani, T., Glass, G., Hoffman, T., Jan, C.-H., Kenyon, C., Klaus, J., Kuhn, K., Zhiyong Ma, Mcintyre, B., Mistry, K., Murthy, A., Obradovic, B., Nagisetty, R., Phi Nguyen, Sivakumar, S., Shaheed, R., Shifren, L., Tufts, B., Tyagi, S., Bohr, M., El-Mansy, Y.

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Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs von Ji-Song Lim, Thompson, S.E., Fossum, J.G.

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Negative Impact of Compressive Biaxial Stress on High Precision Bipolar Devices von Weingartner, Thomas A., Kuo, Chiao-Han, Thomas, Andrew, Thompson, Scott E., Law, Mark E.

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Impact of mechanical stress on direct and trap-assisted gate leakage currents in p -type silicon metal-oxide-semiconductor capacitors von Choi, Youn Sung, Nishida, Toshikazu, Thompson, Scott E.

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Measurement of conduction band deformation potential constants using gate direct tunneling current in n -type metal oxide semiconductor field effect transistors under mechanical st... von Lim, Ji-Song, Yang, Xiaodong, Nishida, Toshikazu, Thompson, Scott E.

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Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps von Koehler, Andrew D, Gupta, Amit, Min Chu, Parthasarathy, Srivatsan, Linthicum, Kevin J, Johnson, J Wayne, Nishida, Toshikazu, Thompson, Scott E

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Size- and Orientation-Dependent Strain Effects on Ballistic Si p-Type Nanowire Field-Effect Transistors von Baykan, M. O., Thompson, S. E., Nishida, T.

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Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances von NOORI, Atif M, BALSEANU, Mihaela, LAUWERS, Anne, LEE, Wen-Chin, JIANXIN LEI, MANDREKAR, Tushar, SCHREUTELKAMP, Robert, SHAH, Kavita, THOMPSON, Scott E, VERHEYEN, Peter, WANG, Ching-Ya, XIA, Li-Qun, BOELEN, Pieter, ARGHAVANI, Reza, COCKBUM, Andrew, DEMUYNCK, Steven, FELCH, Susan, GANDIKOTA, Srinivas, JERRY GELATOS, A, KHANDELWAL, Amit, KITTL, Jorge A

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An Adaptive Grid Scheme for Single-Event Upset Device Simulations von Cummings, D J, Park, H, Thompson, S E, Law, M E

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A Simplified Superior Floating-Body/Gate DRAM Cell von Zhichao Lu, Fossum, J.G., Ji-Woon Yang, Harris, H.R., Trivedi, V.P., Min Chu, Thompson, S.E.

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Mobility Modeling Considerations for Radiation Effects Simulations in Silicon von Cummings, Daniel J, Witulski, Arthur F, Hyunwoo Park, Schrimpf, Ronald D, Thompson, Scott E, Law, Mark E

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Mapping of epitopes, glycosylation sites, and complement regulatory domains in human decay accelerating factor von Coyne, KE, Hall, SE, Thompson, S, Arce, MA, Kinoshita, T, Fujita, T, Anstee, DJ, Rosse, W, Lublin, DM

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Reversible ligand binding reactions: Why do biochemistry students have trouble connecting the dots? von Sears, Duane W., Thompson, Scott E., Saxon, S. Robin

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A logic nanotechnology featuring strained-silicon von Thompson, S.E., Armstrong, M., Auth, C., Cea, S., Chau, R., Glass, G., Hoffman, T., Klaus, J., Zhiyong Ma, Mcintyre, B., Murthy, A., Obradovic, B., Shifren, L., Sivakumar, S., Tyagi, S., Ghani, T., Mistry, K., Bohr, M., El-Mansy, Y.

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