New encapsulant source for III–V quantum well disordering von Rao, E. V. K., Hamoudi, A., Krauz, Ph, Juhel, M., Thibierge, H.

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Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys von Benchimol, J.L., Le Roux, G., Thibierge, H., Daguet, C., Alexandre, F., Brillouet, F.

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Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration von Hamoudi, A., Rao, E. V. K., Krauz, Ph, Ramdane, A., Ougazzaden, A., Robein, D., Thibierge, H.

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Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio von Hamoudi, A., Ougazzaden, A., Krauz, Ph, Rao, E. V. K., Juhel, M., Thibierge, H.

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Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides von Rao, E.V.K., Allovon, M., Rafle, Y., Juhel, M., Thibierge, H., Theys, B., Chevallier, J.

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Highly thermally stable electrical compensation in oxygen implanted p-InAlAs von KRAUZ, P, RAO, E. V. K, THIBIERGE, H, HARMAND, J. C

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Anomalous diffusion of isoelectronic antimony implant induced defects in GaAs-AlGaAs multiquantum well structures von Rao, E. V. K., Krauz, Ph, Thibierge, H., Azoulay, R., Vieu, C.

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Long range disordering of GaAs-AlGaAs multiquantum wells by isoelectronic antimony implants von RAO, E. V. K, JUHEL, M, KRAUZ, P, GAO, Y, THIBIERGE, H

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Disordering of Ga1-xAlxAs-GaAs quantum well structures by donor sulfur diffusion von RAO, E. V. K, THIBIERGE, H, BRILLOUET, F, ALEXANDRE, F, AZOULAY, R

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Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices von RAO, E. V. K, OSSART, P, ALEXANDRE, F, THIBIERGE, H

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Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells von RAO, E. V. K, OSSART, P, THIBIERGE, H, QUILLEC, M, KRAUZ, P

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Devitrification characteristics of GexSe1−x glasses von Azoulay, R., Thibierge, H., Brenac, A.

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Chemical beam epitaxy of AlGaAs and AlInAs using trimethylamine alane precursor von Benchimol, J.L., Zhang, X.Q., Gao, Y., Le Roux, G., Thibierge, H., Alexandre, F.

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The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium von MIRCEA, A, MELLET, R, ROSE, B, ROBEIN, D, THIBIERGE, H, LEROUX, G, DASTE, P, GODEFROY, S, OSSART, P, POUGNET, A.-M

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Silicon implantation in semi-insulating bulk InP; Electrical and photoluminescence measurements von Duhamel, N., Rao, E.V.K., Gauneau, M., Thibierge, H., Mircea, A.

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Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP: an explanation of low Be acceptor activity von Rao, E V K, Alaoui, F, Gao, Y, Benchimol, J L, Thibierge, H

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An optical study of interdiffusion in strained InP-based heterostructures von ALI HAMOUDI, ABDALLAH OUGAZZADEN, KRAUZ, P, KRISHNA RAO, JUHEL, M, THIBIERGE, H

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Electrical and optical properties of oxygen implants disordered InGaAs-InAl(Ga)As MQWs von Rao, E.V.K., Ossart, P., Gao, Y., Quillec, M., Krauz, P., Thibierge, H.

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Influence of boron on tin induced interdiffusion in GaAs-Ga sub(0.72)Al sub(0.28)As superlattices von Rao, E V K, Ossart, P, Alexandre, F, Thibierge, H

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Disordering of Ga1− x Al x As-GaAs quantum well structures by donor sulfur diffusion von Rao, E. V. K., Thibierge, H., Brillouet, F., Alexandre, F., Azoulay, R.

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