Deuterated silicon dioxide for heterogeneous integration of ultra-low-loss waveguides von Jin, Warren, John, Demis D., Bauters, Jared F., Bosch, Tony, Thibeault, Brian J., Bowers, John E.

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Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs von Lal, Shalini, Lu, Jing, Thibeault, Brian J., Wong, Man Hoi, van de Walle, Chris G., DenBaars, Steven P., Mishra, Umesh K.

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Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth von Rode, Johann C., Han-Wei Chiang, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer von Lee, Sanghoon, Huang, Cheng-Ying, Cohen-Elias, Doron, Law, Jeremy J. M., Chobpattanna, Varistha, Krämer, Stephan, Thibeault, Brian J., Mitchell, William, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.

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Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection von Yung-Jr Hung, San-Liang Lee, Thibeault, B. J., Coldren, L. A.

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Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth von Singisetti, U, Man Hoi Wong, Dasgupta, S, Nidhi, Swenson, B, Thibeault, B J, Speck, J S, Mishra, U K

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In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth von SINGISETTI, Uttam, WISTEY, Mark A, BO YU, YU YUAN, WANG, Dennis, TAUR, Yuan, ASBECK, Peter, LEE, Yong-Ju, BUREK, Gregory J, BARASKAR, Ashish K, THIBEAULT, Brian J, GOSSARD, Arthur C, RODWELL, Mark J. W, SHIN, Byungha, KIM, Eun J, MCINTYRE, Paul C

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Ultralow resistance in situ Ohmic contacts to InGaAs/InP von Singisetti, Uttam, Wistey, Mark A., Zimmerman, Jeramy D., Thibeault, Brian J., Rodwell, Mark J. W., Gossard, Arthur C., Bank, Seth R.

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Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor von Lal, Shalini, Jing Lu, Gupta, Geetak, Thibeault, Brian J., DenBaars, Steven P., Mishra, Umesh K.

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Substitutional-Gate MOSFETs With Composite ( \hbox\hbox\hbox/\hbox/\hbox\hbox\hbox) Channels and Self-Aligned MBE Source-Drain Regrowth von Sanghoon Lee, Law, J. J. M., Carter, A. D., Thibeault, B. J., Mitchell, W., Chobpattana, V., Kramer, S., Stemmer, S., Gossard, A. C., Rodwell, M. J. W.

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InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology von Singisetti, Uttam, Wistey, Mark A., Burek, Gregory J., Arkun, Erdem, Baraskar, Ashish K., Sun, Yanning, Kiewra, Edward W., Thibeault, Brian J., Gossard, Arthur C., Palmstrøm, Chris J., Rodwell, Mark J. W.

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Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask von Mitchell, William J., Thibeault, Brian J., John, Demis D., Reynolds, Thomas E.

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Mechanisms of Fano-resonant biosensing: Mechanical loading of plasmonic oscillators von Zhu, Xiangchao, Cao, Ning, Thibeault, Brian J., Pinsky, Benjamin, Yanik, Ahmet Ali

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Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures von Carter, Andrew D, Mitchell, William J, Thibeault, Brian J, Law, Jeremy J. M, Rodwell, Mark J. W

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Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures von Carter, Andrew D., Mitchell, William J., Thibeault, Brian J., Law, Jeremy J. M., Rodwell, Mark J. W.

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InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency von Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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An InGaAs/InP DHBT With Simultaneous \text/\text}~404/901 GHz and 4.3 V Breakdown Voltage von Rode, Johann C., Chiang, Han-Wei, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance von Jain, V., Rode, J. C., Han-Wei Chiang, Baraskar, A., Lobisser, E., Thibeault, B. J., Rodwell, M., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W. K.

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Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization von Lal, Shalini, Lu, Jing, Thibeault, Brian J., Wong, Man Hoi, DenBaars, Steven P., Mishra, Umesh K.

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Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth von Singisetti, Uttam, Man Hoi Wong, Dasgupta, Sansaptak, Nidhi, Swenson, Brian L, Thibeault, Brian J, Speck, James S, Mishra, Umesh K

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