Regrowth-Free GaN-Based Complementary Logic on a Si Substrate von Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Cheng, Kai, Then, Han Wui, Palacios, Tomas

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Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas von Bader, Samuel James, Chaudhuri, Reet, Schubert, Martin F., Then, Han Wui, Xing, Huili Grace, Jena, Debdeep

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Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas von Bader, Samuel James, Chaudhuri, Reet, Nomoto, Kazuki, Hickman, Austin, Chen, Zhen, Then, Han Wui, Muller, David A., Xing, Huili Grace, Jena, Debdeep

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p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si von Chowdhury, Nadim, Lemettinen, Jori, Xie, Qingyun, Zhang, Yuhao, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Suihkonen, Sami, Then, Han Wui, Palacios, Tomas

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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices von Bader, Samuel James, Lee, Hyunjea, Chaudhuri, Reet, Huang, Shimin, Hickman, Austin, Molnar, Alyosha, Xing, Huili Grace, Jena, Debdeep, Then, Han Wui, Chowdhury, Nadim, Palacios, Tomas

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Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration von Then, Han Wui, Radosavljevic, Marko, Jun, Kimin, Koirala, Pratik, Krist, Brian, Talukdar, Tushar, Thomas, Nicole, Fischer, Paul

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The Transistor Laser: Theory and Experiment von Then, Han Wui, Feng, Milton, Holonyak, Nick

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A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors von Desai, Nachiket, Then, Han Wui, Yu, Jingshu, Krishnamurthy, Harish K., Lambert, William J., Butzen, Nicolas, Weng, Sheldon, Schaef, Christopher, Radhakrishnan, Kaladhar, Ravichandran, Krishnan, Tschanz, James W., De, Vivek

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4-GHz Modulation Bandwidth of Integrated 2[Formula Omitted]2 LED Array von Chao-Hsin Wu, Chao-Hsin Wu, Walter, G, Han Wui Then, Han Wui Then, Feng, M, Holonyak, N

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Advancements in 300 mm GaN-on-Si Technology With Industry's First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors von Yu, Qiang, Farid, Ali A., Momson, Ibukunoluwa, Garrett, Jeffrey, Vora, Heli, Bader, Samuel, Zubair, Ahmad, Koirala, Pratik, Beumer, Michael, Vyatskikh, Andrey, Nordeen, Paul, Hoff, Thomas, Radosavljevic, Marko, Rami, Said, O'Mahony, Frank, Then, Han Wui

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Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications von Then, Han Wui, Radosavljevic, M., Yu, Q., Latorre-Rey, A., Vora, H., Bader, S., Momson, I., Thomson, D., Beumer, M., Koirala, P., Peck, J., Oni, A., Hoff, T., Jordan, R., Michaelos, T., Nair, N., Nordeen, P., Vyatskikh, A., Ban, I., Zubair, A., Rami, S., Fischer, P.

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Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas von Bader, Samuel James, Chaudhuri, Reet, Schubert, Martin, Han Wui Then, Xing, Huili Grace, Jena, Debdeep

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Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas von Bader, Samuel James, Chaudhuri, Reet, Nomoto, Kazuki, Hickman, Austin, Chen, Zhen, Han Wui Then, Muller, David A, Xing, Huili Grace, Jena, Debdeep

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HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR von THEN, Han Wui, RADOSAVLJEVIC, Marko

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The Transistor Laser: Theory and Experiment: 50TH ANNIVERSARY OF THE LIGHT-EMITTING DIODE (LED): AN ULTIMATE LAMP von HAN WUI THEN, FENG, Milton, HOLONYAK, Nick

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4-GHz Modulation Bandwidth of Integrated 2x2 LED Array von Wu, Chao-Hsin, Walter, G, Wui Then, Han, Feng, M, Holonyak, N

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Printable Mesoscopic Perovskite Solar Cells von Han, Hongwei, Grätzel, Michael, Mei, Anyi, Hu, Yue

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HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR von THEN, Han Wui, RADOSAVLJEVIC, Marko

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Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication von Then, Han Wui, Radosavljevic, Marko, Dasgupta, Sansaptak

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HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR von THEN, Han Wui, RADOSAVLJEVIC, Marko

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