Novel integration method for III-V semiconductor devices on silicon platform von Matsumoto, Keiichi, Kishikawa, Junya, Nishiyama, Tetsuo, Onuki, Yuya, Shimomura, Kazuhiko

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Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate von Periyanayagam, Gandhi Kallarasan, Nishiyama, Tetsuo, Kamada, Naoki, Onuki, Yuya, Shimomura, Kazuhiko

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Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate von Matsumoto, Keiichi, Kishikawa, Junya, Nishiyama, Tetsuo, Kanke, Tomokazu, Onuki, Yuya, Shimomura, Kazuhiko

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Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate von Aikawa, Masaki, Onuki, Yuya, Hayasaka, Natsuki, Nishiyama, Tetsuo, Kamada, Naoki, Han, Xu, Periyanayagam, Gandhi Kallarasan, Uchida, Kazuki, Sugiyama, Hirokazu, Shimomura, Kazuhiko

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Lasing Characteristics of 1.2µm GaInAsP LD on InP/Si Substrate von Gandhi, Kallarasan Periyanayagam, Nishiyama, Tetsuo, Kamada, Naoki, Onuki, Yuya, Shimomura, Kazuhiko

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Fabrication of 1.5um GaInAsP LD on InP/Si Substrate using Hydrophilic Wafer Bonding Technique von Kallarasan, Gandhi, Nishiyama, Tetsuo, Kamada, Naoki, Onuki, Yuya, Shimomura, Kazuhiko

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Integration of GaInAsP Laser Diode on Direct-Bonded Thin Film InP-Si Substrate von Kallarasan, Gandhi, Nishiyama, Tetsuo, Kamada, Naoki, Onuki, Yuya, Shimomura, Kazuhiko

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Demonology, Possession and the Question of Historical Transition von NISHIYAMA, TETSUO

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Control system, control method, and non-transitory storage medium von Nishiyama, Tetsuo, Tanabe, Hideki

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Lasing characteristics of GaInAsP double-hetero laser on wafer bonded InP/Si substrate von Kamada, Naoki, Nishiyama, Tetsuo, Onuki, Yuya, Xu, Han, Kazuhiko, Shimomura

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Current injection characteristics of modulation doped InAs/InP double capped quantum dots structure von Sukigara, Toshiki, Yamamoto, Yuta, Nishiyama, Tetsuo, Shimomura, Kazuhiko

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CONTROL SYSTEM, CONTROL METHOD, AND NON-TRANSITORY STORAGE MEDIUM von TANABE, Hideki, NISHIYAMA, Tetsuo

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Three-Dimensionality on Induced Flows and Fluid Forces of Cavitating-Hydrofoils of Finite Span : 3rd Report, Cavitating-Line Theory von Nishiyama, Tetsuo

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Arrayed waveguides InAs QDs LED integrated with converging waveguide von Sukigara, Toshiki, Yamamoto, Yuta, Nishiyama, Tetsuo, Shimomura, Kazuhiko

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Battery charging system for electric vehicle von Nishiyama, Tetsuo, Yasuda, Toru

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Annealing temperature dependence of GaInAsP laser diode using wafer bonded InP/Si substrate von Onuki, Yuya, Nishiyama, Tetsuo, Kamada, Naoki, Han, Xu, Kallarasan, Gandhi, Aikawa, Masaki, Uchida, Kazuki, Sugiyama, Hirokazu, Hayasaka, Natsuki, Shimomura, Kazuhiko

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Annealing temperature dependence on current-voltage characterisitic of laser structure on directly-bonded InP/Si substrate von Hayasaka, Natsuki, Nishiyama, Tetsuo, kamada, Naoki, Onuki, Yuya, Han, Xun, Periyanayagam, Gandhi Kallarasan, Aikawa, Masaki, Uchida, Kazuki, Sugiyama, Hirokazu

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Bonding pressure dependence on shear force and PL intensity of crystal grown film on directly-bonded InP/Si substrate von Onuki, Yuya, Matsumoto, Keiichi, Kishikawa, Junya, Nishiyama, Tetsuo, Kamada, Naoki, Shimomura, Kazuhiko

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Growth of InAs QDs on directry - bonded InP/Si substrate von Kamada, Naoki, Sukigara, Toshiki, Nishiyama, Tetsuo, Onuki, Yuya, Matsumoto, Keiichi, Shimomura, Kazuhiko

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InP template layer thickness dependence of GaInAsP-InP layer grown on directly-bonded InP/Si substrate von Onuki, Yuya, Nishiyama, Tetsuo, Kamada, Naoki, Xu, Han, Aikawa, Masaki, Uchida, Kazuki, Sugiyama, Hirokazu, Shimomura, Hirokazu

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