Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory von Sakotsubo, Yukihiro, Terai, Masayuki, Kotsuji, Setsu, Sakamoto, Toshitsugu, Hada, Mitsuhiro

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Memory-State Dependence of Random Telegraph Noise of \hbox\hbox/\hbox Stack ReRAM von Terai, Masayuki, Sakotsubo, Yukihiro, Saito, Yukihiro, Kotsuji, Setsu, Hada, Hiromitsu

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Effect of Nitrogen Profile and Fluorine Incorporation on Negative-Bias Temperature Instability of Ultrathin Plasma-Nitrided SiON MOSFETs von Terai, M., Watanabe, K., Fujieda, S.

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Lateral Profile of Trapped Charges in Split-Gate SONOS Memory von Tsuji, Y., Terai, M., Fujieda, S., Syo, T., Saito, T., Ando, K.

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Impact of Crystalline Phase of Ni-FUSI Gate Electrode on Bias Temperature Instability and Gate Dielectric Breakdown of HfSiON MOSFETs von Terai, M., Onizawa, T., Kotsuji, S., Ikarashi, N., Toda, A., Fujieda, S., Watanabe, H.

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Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal--O... von Terai, Masayuki, Hase, Takashi, Shibahara, Kentaro, Watanabe, Hirohito

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Memory-State Dependence of Random Telegraph Noise of Ta2O5/TiO2 Stack ReRAM von TERAI, Masayuki, SAKOTSUBO, Yukihiro, SAITO, Yukihiro, KOTSUJI, Setsu, HADA, Hiromitsu

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A Parallel Method to Extract Critical Areas of Net Pairs for Diagnosing Bridge Faults von SUEMITSU, Keiichi, ITO, Toshiaki, KANAMOTO, Toshiki, TERAI, Masayuki, KOTANI, Satoshi, SAWADA, Shigeo

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Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks von Fujieda, Shinji, Kotsuji, Setsu, Morioka, Ayuka, Terai, Masayuki, Saitoh, Motofumi

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Bias Temperature Instability Characterization of Advanced Gate Stacks von Fujieda, Shinji, Terai, Masayuki, Saitoh, Motofumi, Toda, Akio, Miura, Yoshinao, Liu, Ziyuan, Teraoka, Yuden, Yoshigoe, Akitaka, Wilde, Markus, Fukutani, Katsuyuki

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Resistive memory device von Terai, Masayuki

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Memory-State Dependence of Random Telegraph Noise of [Formula Omitted] Stack ReRAM von Terai, Masayuki, Sakotsubo, Yukihiro, Saito, Yukihiro, Kotsuji, Setsu, Hada, Hiromitsu

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Memory-State Dependence of Random Telegraph Noise of hbox Ta 2 hbox O 5 / hbox TiO 2 Stack ReRAM von Terai, Masayuki, Sakotsubo, Yukihiro, Saito, Yukihiro, Kotsuji, Setsu, Hada, Hiromitsu

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RESISTIVE MEMORY DEVICE von TERAI, MASAYUKI

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Semiconductor device and method for fabricating the same von Terai, Masayuki

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A fast eliminating system of narrow electron-beam exposure-figures for improving pattern accuracy von MORIIZUMI, K, NAKAO, H, KAMIYAMA, K, KITADA, O, TAOKA, H, TERAI, M, MIWA, H

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Atomic structural analysis of a monolayer epitaxial film of hexagonal boron nitride/Ni(111) studied by LEED intensity analysis von Gamou, Y, Terai, M, Nagashima, A, Oshima, C

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Memory device and method of fabricating the same von Terai, Masayuki

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Memory devices and methods of manufacturing the same von Terai, Masayuki

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SEMICONDUCTOR DEVICE HAVING DATA STORAGE PATTERN von TERAI, Masayuki

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