Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE von Saito, Y., Harima, H., Kurimoto, E., Yamaguchi, T., Teraguchi, N., Suzuki, A., Araki, T., Nanishi, Y.

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Optical Properties of InxGa1-xN with Entire Alloy Composition on InN Buffer Layer Grown by RF-MBE von Hori, M., Kano, K., Yamaguchi, T., Saito, Y., Araki, T., Nanishi, Y., Teraguchi, N., Suzuki, A.

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Monolithically Fabricated Hybrid Head for Near-Field Assisted Magnetic Recording von Miyanishi, S., Innami, K., Naka, T., Kitazawa, T., Yagura, M., Teraguchi, N., Murakami, Y., Takahashi, A.

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Growth of high-quality InN using low-temperature intermediate layers by RF-MBE von Saito, Y., Yamaguchi, T., Kanazawa, H., Kano, K., Araki, T., Nanishi, Y., Teraguchi, N., Suzuki, A.

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Growth of AlN films on SiC substrates by RF-MBE and RF-MEE von Teraguchi, N., Suzuki, A., Saito, Y., Yamaguchi, T., Araki, T., Nanishi, Y.

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Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film von Xi-Jun, Li, YI-Kai, Zhou, M., Kim, S., Kimura, N., Teraguchi, S., Emura, S., Hasegawa, H., Asahi

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GaN grown on hydrogen plasma cleaned 6H-SiC substrates von LIN, M. E, STRITE, S, AGARWAL, A, SALVADOR, A, ZHOU, G. L, TERAGUCHI, N, ROCKETT, A, MORKOC, H

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Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE von Suzuki, Akira, Teraguchi, Nobuaki, Nanishi, Y.

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Magnetic, optical and electrical properties of GaN and AlN doped with rare-earth element Gd von Choi, S. W., Zhou, Y. K., Emura, S., Lee, X. J., Teraguchi, N., Suzuki, A., Asahi, H.

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Polarity of High-Quality Indium Nitride Grown by RF Molecular Beam Epitaxy von Saito, Y., Tanabe, Y., Yamaguchi, T., Teraguchi, N., Suzuki, A., Araki, T., Nanishi, Y.

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Optical and magnetic properties of the DyN/GaN superlattice von Zhou, Y. K., Kim, M. S., Teraguchi, N., Suzuki, A., Nanishi, Y., Asahi, H.

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Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy von Teraguchi, Nobuaki, Suzuki, Akira, Nanishi, Yasushi, Zhou, Yi-Kai, Hashimoto, Masahiko, Asahi, Hajime

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Growth of ZnSe/MgS strained-layer superlattices by molecular beam epitaxy von Teraguchi, N., Mouri, H., Tomomura, Y., Suzuki, A., Taniguchi, H., Rorison, J., Duggan, G.

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Effect of sapphire substrate nitridation on determining rotation domain in GaN growth von Yamaguchi, T., Araki, T., Saito, Y., Kano, K., Kanazawa, H., Nanishi, Y., Teraguchi, N., Suzuki, A.

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Schottky barrier heights of metals contacting to p-ZnSe von Koide, Yasuo, Kawakami, T., Teraguchi, N., Tomomura, Y., Suzuki, A., Murakami, Masanori

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Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe von Strite, S., Chandrasekhar, D., Smith, David J., Sariel, J., Chen, H., Teraguchi, N., Morkoç, H.

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Study of Epitaxial Relationship in InN Growth on Sapphire (0001) by RF-MBE von Yamaguchi, T., Saito, Y., Kano, K., Araki, T., Teraguchi, N., Suzuki, A., Nanishi, Y.

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Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching von Nakamura, Shun-ichi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Tanaka, Satoru, Teraguchi, Nobuaki, Suzuki, Akira

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Local structure of rare-earth-doped diluted magnetic semiconductor GaGdN von Hashimoto, M., Emura, S., Asano, R., Tanaka, H., Teraguchi, N., Suzuki, A., Nanishi, Y., Honma, T., Umesaki, N., Asahi, H.

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Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy von Saito, Yoshiki, Teraguchi, Nobuaki, Suzuki, Akira, Araki, Tsutomu, Nanishi, Yasushi

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