Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs von Taur, Y.

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A 2-D analytical solution for SCEs in DG MOSFETs von Liang, X., Taur, Y.

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A continuous, analytic drain-current model for DG MOSFETs von Taur, Y., Liang, X., Wang, W., Lu, H.

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Device scaling limits of Si MOSFETs and their application dependencies von Frank, D.J., Dennard, R.H., Nowak, E., Solomon, P.M., Taur, Y., Hon-Sum Philip Wong

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Simulation of Nanoscale Multidimensional Transient Heat Conduction Problems Using Ballistic-Diffusive Equations and Phonon Boltzmann Equation von Yang, Ronggui, Chen, Gang, Laroche, Marine, Taur, Yuan

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Generalized scale length for two-dimensional effects in MOSFETs von Frank, D.J., Taur, Y., Wong, H.-S.P.

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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's von Lo, S.-H., Buchanan, D.A., Taur, Y., Wang, W.

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Ultra-low power 1T-DRAM in FDSOI technology von El Dirani, H., Lee, K.H., Parihar, M.S., Lacord, J., Martinie, S., Barbe, J-Ch, Mescot, X., Fonteneau, P., Broquin, J.-E., Ghibaudo, G., Galy, Ph, Gamiz, F., Taur, Y., Kim, Y.-T., Cristoloveanu, S., Bawedin, M.

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Changes to the Editorial Board von Taur, Y.

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Editorial Kudos to Our Reviewers von Taur, Y.

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A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters von Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch, Mescot, X., Fonteneau, P., Galy, Ph, Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y-T., Wan, J., Bawedin, M.

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Corrections to "Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si" von Taur, Y.

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Effect and extraction of series resistance in Al2O3-InGaAs MOS with bulk-oxide trap von Yu, B, Yuan, Y, Chen, H.-P, Ahn, J, McIntyre, P.C, Taur, Y

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Changes to the Editorial Board von Taur, Y.

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Changes to the Editorial Board von Taur, Y.

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Editorial kudos to our reviewers von Taur, Y.

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Changes to the Editorial Board von Taur, Y.

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Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model von Fischetti, M. V., Jin, S., Tang, T.-W., Asbeck, P., Taur, Y., Laux, S. E., Rodwell, M., Sano, N.

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The gut microbiota is associated with immune cell dynamics in humans von Schluter, Jonas, Peled, Jonathan U., Taylor, Bradford P., Markey, Kate A., Smith, Melody, Taur, Ying, Niehus, Rene, Staffas, Anna, Dai, Anqi, Fontana, Emily, Amoretti, Luigi A., Wright, Roberta J., Morjaria, Sejal, Fenelus, Maly, Pessin, Melissa S., Chao, Nelson J., Lew, Meagan, Bohannon, Lauren, Bush, Amy, Sung, Anthony D., Hohl, Tobias M., Perales, Miguel-Angel, van den Brink, Marcel R. M., Xavier, Joao B.

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The influence of source and drain junction depth on the short-channel effect in MOSFETs von Sleva, S., Taur, Y.

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