Unveiling the origins of quasi-phase matching spectral imperfections in thin-film lithium niobate frequency doublers von Zhao, Jie, Li, Xiaoting, Hu, Ting-Chen, Sayem, Ayed Al, Li, Haochuan, Tate, Alaric, Kim, Kwangwoong, Kopf, Rose, Sanjari, Pouria, Earnshaw, Mark, Fontaine, Nicolas K., Wang, Cheng, Blanco-Redondo, Andrea

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4×53 Gbit/s Electro-Optic Engine with a Surface-Normal Electroabsorption Modulator Array von Grillanda, Stefano, Tran, Cuong, Che, Di, Hu, Ting-Chen, Basavanhally, Nagesh, Papazian, Rick, Kopf, Rose, Tate, Alaric, Cappuzzo, Mark, Earnshaw, Mark, Kim, K.W., Raybon, Gregory, Neilson, David, Iannone, Patrick

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107 Gb/s Ultra-High Speed, Surface-Normal Electroabsorption Modulator Devices von Grillanda, Stefano, Hu, Ting-Chen, Neilson, David, Basavanhally, Nagesh, Low, Yee, Safar, Hugo, Cappuzzo, Mark, Kopf, Rose, Tate, Alaric, Raybon, Gregory, Adamiecki, Andrew, Fontaine, Nicolas, Earnshaw, Mark

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Variable Temperature Broadband Microwave and Millimeter-Wave Characterization of Electrochromic (WO3/LiNbO3/NiO) Thin Films von Norooziarab, Majid, Bulja, Senad, Cahill, Robert, Kopf, Rose, Hu, Ting Chen, Tate, Alaric

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PAM-4 transmission up to 160 Gb/s with surface-normal electro-absorption modulators von Iannone, Patrick, Chen, Xi, Grillanda, Stefano, Raybon, Gregory, Burrows, Ellsworth, Adamiecki, Andrew, Hu, Ting-Chen, Neilson, David T., Basavanhally, Nagesh, Low, Yee, Kopf, Rose, Tate, Alaric, Earnshaw, Mark

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Novel integration technique for silicon/III-V hybrid laser von Dong, Po, Hu, Ting-Chen, Liow, Tsung-Yang, Chen, Young-Kai, Xie, Chongjin, Luo, Xianshu, Lo, Guo-Qiang, Kopf, Rose, Tate, Alaric

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SiGe differential transimpedance amplifier with 50-GHz bandwidth von Weiner, J.S., Leven, A., Houtsma, V., Baeyens, Y., Young-Kai Chen, Paschke, P., Yang Yang, Frackoviak, J., Wei-Jer Sung, Tate, A., Reyes, R., Kopf, R.F., Weimann, N.G.

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An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth von Weiner, J.S., Lee, J.S., Leven, A., Baeyens, Y., Houtsma, V., Georgiou, G., Yang Yang, Frackoviak, J., Tate, A., Reyes, R., Kopf, R.F., Wei-Jer Sung, Weimann, N.G., Young-Kai Chen

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High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s von Baeyens, Y., Weimann, N., Roux, P., Leven, A., Houtsma, V., Kopf, R.F., Yang Yang, Frackoviak, J., Tate, A., Weiner, J.S., Paschke, P., Young-Kai Chen

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A surface-normal photodetector as nonlinear activation function in diffractive optical neural networks von Ashtiani, Farshid, Idjadi, Mohamad Hossein, Hu, Ting-Chen, Grillanda, Stefano, Neilson, David, Earnshaw, Mark, Cappuzzo, Mark, Kopf, Rose, Tate, Alaric, Blanco-Redondo, Andrea

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InP DHBT circuits: From device physics to 40 Gb/s and 100 Gb/s transmission system experiments von Weimann, Nils, Houtsma, Vincent, Kopf, Rose, Baeyens, Yves, Weiner, Joseph, Tate, Alaric, Frackoviak, John, Chen, Young-Kai, Raybon, Gregory, Godin, Jean, Riet, Muriel, Nodjiadjim, Virginie, Konczykowska, Agnieszka, Dupuy, Jean-Yves, Jorge, Filipe, Scavennec, Andre, Charlet, Gabriel

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InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments von Weimann, Nils, Houtsma, Vincent, Kopf, Rose, Baeyens, Yves, Weiner, Joseph, Tate, Alaric, Frackoviak, John, Chen, Young-Kai, Raybon, Gregory, Godin, Jean, Riet, Muriel, Nodjiadjim, Virginie, Konczykowska, Agnieszka, Dupuy, Jean-Yves, Jorge, Filipe, Scavennec, André, Charlet, Gabriel

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A surface-normal photodetector as nonlinear activation function in diffractive optical neural networks von Ashtiani, Farshid, Mohamad Hossein Idjadi, Ting-Chen, Hu, Grillanda, Stefano, Neilson, David, Earnshaw, Mark, Cappuzzo, Mark, Kopf, Rose, Tate, Alaric, Blanco-Redondo, Andrea

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Method of fabricating a heterojunction bipolar transistor von Hamm, Robert Alan, Kopf, Rose Fasano, Ryan, Robert William, Tate, Alaric, Wang, Yu-Chi

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Method of fabricating a heterojunction bipolar transistor von RYAN ROBERT WILLIAM, TATE ALARIC, KOPF ROSE FASANO, HAMM ROBERT ALAN, WANG YUI

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Alignment techniques for epitaxial growth processes von RYAN ROBERT WILLIAM, TATE ALARIC, KOPF ROSE FASANO, HAMM ROBERT ALAN, PINZONE CHRISTOPHER JAMES

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Method for making InP heterostructure devices von KOPF, ROSE FASANO, TATE, ALARIC, RYAN, ROBERT WILLIAM, HAMM, ROBERT ALAN

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Method of manufacturing schottky gate transistor utilizing alignment techniques with multiple photoresist layers von KOPF, ROSE FASANO, TATE, ALARIC, RYAN, ROBERT WILLIAM, HAMM, ROBERT ALAN, BURM, JINWOOK

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Alignment techniques for photolithography utilizing multiple photoresist layers von KOPF, ROSE FASANO, TATE, ALARIC, RYAN, ROBERT WILLIAM, HAMM, ROBERT ALAN, BURM, JINWOOK

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Repairing fractured wafers in semiconductor manufacturing von KOPF, ROSE FASANO, TATE, ALARIC, RYAN, ROBERT WILLIAM, HAMM, ROBERT ALAN, BURM, JINWOOK

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