Ion beams in silicon processing and characterization von Chason, E., Picraux, S. T., Poate, J. M., Borland, J. O., Current, M. I., Diaz de la Rubia, T., Eaglesham, D. J., Holland, O. W., Law, M. E., Magee, C. W., Mayer, J. W., Melngailis, J., Tasch, A. F.

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Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs von Mudanai, S., Register, L.F., Tasch, A.F., Banerjee, S.K.

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CORRELATION BETWEEN SILICON HYDRIDE SPECIES AND THE PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON von TSAI, C, LI, KH, KINOSKY, DS, QIAN, RZ, HSU, TC, IRBY, JT, BANERJEE, SK, TASCH, AF, CAMPBELL, JC, HANCE, BK, WHITE, JM

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Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics von Jallepalli, S., Bude, J., Shih, W.-K., Pinto, M.R., Maziar, C.M., Tasch, A.F.

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Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers von Chindalore, G., Hareland, S.A., Jallepalli, S.A., Tasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.

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A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's von Hasnat, K., Yeap, C.-F., Jallepalli, S., Shih, W.-K., Hareland, S.A., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.

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Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET's von Chindalore, G., Mudanai, S., Shih, W.-K., Tasch, A.F., Maziar, C.M.

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Modeling of direct tunneling current through gate dielectric stacks von Mudanai, S., Yang-Yu Fan, Qiqing Ouyang, Tasch, A.F., Banerjee, S.K.

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Models for electron and hole mobilities in MOS accumulation layers von Mudanai, S., Chindalore, G.L., Shih, W.-K., Wang, H., Ouyang, Q., Tasch, A.F., Maziar, C.M., Banerjee, S.K.

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Monte Carlo simulation of boron implantation into single-crystal silicon von Klein, K.M., Park, C., Tasch, A.F.

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Monte Carlo simulation of electron transport in simple orthorhombically strained silicon von Wang, Xin, Kencke, D. L., Liu, K. C., Tasch, A. F., Register, L. F., Banerjee, S. K.

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Ferroelectric materials for 64 Mb and 256 Mb DRAMs von Parker, L.H., Tasch, A.F.

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An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si von Chindalore, G., Shih, W.-K., Jallepalli, S., Hareland, S.A., Tasch, A.F., Maziar, C.M.

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A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers von Shin, H., Tasch, A.F., Maziar, C.M., Banerjee, S.K.

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Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon von KLEIN, K. M, PARK, C, TASCH, A. F

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Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers von Shin, H., Yeric, G.M., Tasch, A.F., Maziar, C.M.

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A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's von Agostinelli, V.M., Shin, H., Tasch, A.F.

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Experimental determination of electron and hole mobilities in MOS accumulation layers von McKeon, J.B., Chindalore, G., Hareland, S.A., Shih, W.-K., Wang, C., Tasch, A.F., Maziar, C.M.

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The viability of GeH4-based in situ clean for low temperature silicon epitaxial growth von WANG, C.-L, UNNIKRISHNAN, S, KIM, B.-Y, KWONG, D.-L, TASCH, A. F

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Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon von Shyh-Horng Yang, Morris, S.J., Shiyang Tian, Parab, K.B., Tasch, A.F.

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