Birefringence control using stress engineering in silicon-on-insulator (SOI) waveguides von Ye, W.N., Xu, D.-X., Janz, S., Cheben, P., Picard, M.-J., Lamontagne, B., Tarr, N.G.

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CMOS-compatible optical rib waveguides defined by local oxidation of silicon von ROWE, L. K, ELSEY, M, TARR, N. G, KNIGHTS, A. P, POST, E

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Effect of PEDOT band structure on conductive polymer-insulator-silicon junctions von Demtchenko, S., Tarr, N. G., McGarry, S.

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Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS von Logan, D F, Knights, A P, Jessop, P E, Tarr, N G

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GaN HEMT and MOS monolithic integration on silicon substrates von Chyurlia, P., Tang, H., Semond, F., Lester, T., Bardwell, J. A., Rolfe, S., Tarr, N. G.

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Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip von Jessop, P. E., Rowe, L. K., McFaul, S. M., Knights, A. P., Tarr, N. G., Tam, A.

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24 GHz On-Chip Antennas and Balun on Bulk Si for Air Transmission von Shamim, A., Roy, L., Fong, N., Tarr, N.G.

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Design of wide-band CMOS VCO for multiband wireless LAN applications von Fong, N.H.W., Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L.F., Plett, C., Tarr, N.G.

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Low temperature plasma etching for Si3N4 waveguide applications von Celo, D., Vandusen, R., Smy, T., Albert, J., Tarr, N. G., Waldron, P. D.

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Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates von CHYURLIA, P. N, SEMOND, F, LESTER, T, BARDWELL, J. A, ROLFE, S, TANG, H, TARR, N. G

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Characterization of silver CPWs for applications in silicon MMICs von Levenets, V.V., Amaya, R.E., Tarr, N.G., Smy, T.J., Rogers, J.W.M.

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A floating gate MOSFET dosimeter requiring no external bias supply von Tarr, N.G., Mackay, G.F., Shortt, K., Thomson, I.

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Quantitative Radio-Labeled Biomolecule Detection Using a Functionalized CMOS Sensor von Griffin, R. H., Mozenson, O., Beking, M. A., DeRosa, M. C., Lopinski, G., Tarr, N. G.

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Post-processed Cu inductors with application to a completely integrated 2-GHz VCO von Rogers, J.W.M., Levenets, V., Pawlowicz, C.A., Tarr, N.G., Smy, T.J., Plett, C.

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A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology von Fong, N.H.W., Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L.F., Plett, C., Tarr, N.G.

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A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeter von Tarr, N.G., Shortt, K., Yanbin Wang, Thomson, I.

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Optical modulator in silicon-on-insulator with a low thermal signature von Waldron, P. D., Jessop, P. E., Yuen, A. P., Winchiu, L., Chyurlia, P., Tarr, N. G., Smy, T. J., Golub, I., Xu, D.-X., Janz, S.

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Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration von Chyurlia, P., Semond, F., Lester, T., Bardwell, J. A., Rolfe, S., Cordier, Y., Baron, N., Moreno, J.-C., Tarr, N. G.

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Application of PVD silver for integrated microwave passives in silicon technology von Levenets, V.V., Amaya, R.E., Tarr, N.G., Smy, T.J.

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Characterization and modeling of AlGaN∕GaN heterostructure field effect transistors for low noise amplifiers von Knox, S. H., Rogers, J. W. M., Chyurlia, P. N. A., Tarr, N. G., Bardwell, J. A., Tang, H., Haffouz, S.

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