Iterative automatic test generation method for telecommunication protocols von Kovács, G., Pap, Z., Csopaki, G., Tarnay, K.

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Examination of MOS structures by a 3D particle dynamics Monte-Carlo simulator including electrothermal effects von Tarnay, K, Gali, A, Poppe, A, Kocsis, T, Masszi, F

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Modelling of Semiconductor Structures and Devices von Tarnay, K

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Standardized languages for telecommunication systems von ADAMIS, G, HORVATH, R, PAP, Z, TARNAY, K

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The ionisation process of α particles in mesoscopic structures: simulation by Monte Carlo method von Tarnay, K, Masszi, F, Kocsis, T, Poppe, A, Kiss, L

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Influence of inversion channel quantization on the surface potential in the MOS structure von Paasch, G., Scheinert, S., Tarnay, K.

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The domain transit time in Gunn-diodes von Tarnay, K.

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Temperature dependence of the current of the field-effect transistors in the pinch-off region von Tarnay, K.

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Voltage tuning of tunnel-diode oscillators von Tarnay, K.

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The noise-figure minima of tunnel-diode amplifiers von Tarnay, K.

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Handling learning objects in distributed environment von Muhi, D., Medve, A., Dulai, T., Tarnay, K.

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Courses in Microelectronics at the Technical University, Budapest von Ambrózy, A., Tarnay, K.

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Comments on "Development of mathematical models of semiconductor devices for computer-aided circuit analysis" von Tarnay, K.

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Comparison and critique of the diffusion and intervalley scattering models of Gunn domain dynamics von Tarnay, K., Székely, V.

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The effect of the field-dependent mobility on field-effect transistor characteristics von Tarnay, K., Trofimenkoff, F.N.

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Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions von Tarnay, K., Elfsten, B., Masszi, F., Tove, P.A.

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Ion implantation process modelling von Drozdy, G, Lohner, T, Revesz, P, Tarnay, K, Gyulai, J

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Electric field versus band bending in MIS structures: Quantum interpolation formula for device modeling von Paasch, G., Tarnay, K., Zöllner, J.-P., Übensee, H.

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A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical Computations von Masszi, F, Stolt, L, Tove, P A, Tarnay, K

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Formal specification of conformance testing documents for communication protocols von Ponce, A.M., Csopaki, G., Tarnay, K.

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