Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature von Guise, J., Ratovo, H., Thual, M., Fehlen, P., Gonzalez-Posada Flores, F., Rodriguez, J.-B., Cerutti, L., Centeno, E., Blin, S., Taliercio, T.

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Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures von Milla, M J, Barho, F, González-Posada, F, Cerutti, L, Bomers, M, Rodriguez, J-B, Tournié, E, Taliercio, T

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Localized surface plasmon resonances in highly doped semiconductors nanostructures von N'Tsame Guilengui, V., Cerutti, L., Rodriguez, J.-B., Tournié, E., Taliercio, T.

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Epsilon near-zero all-optical terahertz modulator von Alvear-Cabezón, E., Taliercio, T., Blin, S., Smaali, R., Gonzalez-Posada, F., Baranov, A., Teissier, R., Centeno, E.

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Inverse-designed terahertz modulators based on semiconductor multilayers von Centeno, E, Alvear-Cabezón, E, Smaali, R, Moreau, A, Taliercio, T

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Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas von Milla, M J, Barho, F, González-Posada, F, Cerutti, L, Charlot, B, Bomers, M, Neubrech, F, Tournie, E, Taliercio, T

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Photo-generated metasurfaces for resonant and high modulation of terahertz signals von Smaali, R, Taliercio, T, Centeno, E

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Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells von Morhain, Christian, Bretagnon, Thierry, Lefebvre, Pierre, Tang, X, Valvin, Pierre, Guillet, Thierry, Gil, Bernard, Taliercio, Thierry, Teisseire-Doninelli, M, Vinter, B., Deparis, Christiane

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Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions von Louarn, K, Claveau, Y, Hapiuk, D, Fontaine, C, Arnoult, A, Taliercio, T, Licitra, C, Piquemal, F, Bounouh, A, Cavassilas, N, Almuneau, G

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Influence of electron-phonon interaction on the optical properties of III nitride semiconductors von Zhang, X B, Taliercio, T, Kolliakos, S, Lefebvre, P

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy von Lefebvre, P., Morel, A., Gallart, M., Taliercio, T., Allègre, J., Gil, B., Mathieu, H., Damilano, B., Grandjean, N., Massies, J.

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Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory von Bardoux, R., Guillet, T., Gil, B., Lefebvre, P., Bretagnon, T., Taliercio, T., Rousset, S., Semond, F.

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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots von Bretagnon, Thierry, Lefebvre, Pierre, Valvin, Pierre, Bardoux, Richard, Guillet, Thierry, Taliercio, Thierry, Gil, Bernard, Grandjean, Nicolas, Semond, Fabrice, Damilano, B., Dussaigne, Amélie, Massies, Jean

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Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems von Morel, A., Lefebvre, P., Kalliakos, S., Taliercio, T., Bretagnon, T., Gil, B.

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Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells von Taliercio, T., Gassenq, A., Luna, E., Trampert, A., Tournié, E.

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Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes von Kalliakos, S., Bretagnon, T., Lefebvre, P., Taliercio, T., Gil, B., Grandjean, N., Damilano, B., Dussaigne, A., Massies, J.

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Fibroblast Growth Factor 23 and Risk of Hospitalization with Infection in Chronic Kidney Disease: The Chronic Renal Insufficiency Cohort (CRIC) Study von Ishigami, Junichi, Taliercio, Jonathan T, Feldman, Harold I, Srivastava, Anand, Townsend, Raymond R, Cohen, Debbie L, Horwitz, Edward J, Rao, Panduranga, Charleston, Jeanne, Fink, Jeffrey C, Ricardo, Ana C, Sondheimer, James, Chen, Teresa K, Wolf, Myles, Isakova, Tamara, Appel, Lawrence J, Matsushita, Kunihiro

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Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes von Kalliakos, S., Zhang, X. B., Taliercio, T., Lefebvre, P., Gil, B., Grandjean, N., Damilano, B., Massies, J.

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Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition von Intartaglia, R., Maleyre, B., Ruffenach, S., Briot, O., Taliercio, T., Gil, B.

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Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation von Lefebvre, Pierre, Kalliakos, Sokratis, Bretagnon, Thierry, Valvin, Pierre, Taliercio, Thierry, Gil, Bernard, Grandjean, Nicolas, Massies, Jean

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