Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach von Dauelsberg, M., Brien, D., Püsche, R., Schön, O., Yakovlev, E.V., Segal, A.S., Talalaev, R.A.

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AlInN MOVPE: growth chemistry and analysis of trends von Lobanova, A.V., Segal, A.S., Yakovlev, E.V., Talalaev, R.A.

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MOVPE process for horizontal reactors with reduced parasitic deposition von Hardtdegen, H., Kaluza, N., Steins, R., Schmidt, R., Wirtz, K., Yakovlev, E.V., Talalaev, R.A., Makarov, Yu.N.

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Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range von Lundin, V. V., Rodin, S. N., Sakharov, A. V., Tsatsulnikov, A. F., Lobanova, A. V., Bogdanov, M. V., Talalaev, R. A., Sun, Haiding, Long, Shibing

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Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates von Kunz, T., Burkert, I., Auer, R., Lovtsus, A.A., Talalaev, R.A., Makarov, Yu.N.

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Hydrogen effects in III-nitride MOVPE von Yakovlev, E.V., Talalaev, R.A., Segal, A.S., Lobanova, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Tsatsulnikov, A.F., Nikolaev, A.E.

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GaN evaporation in molecular-beam epitaxy environment von Grandjean, N., Massies, J., Semond, F., Karpov, S. Yu, Talalaev, R. A.

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Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study von Kondratyev, A.V., Talalaev, R.A., Lundin, W.V., Sakharov, A.V., Tsatsul’nikov, A.V., Zavarin, E.E., Fomin, A.V., Sizov, D.S.

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Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors von Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.

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MOVPE growth and in situ characterization of GaN layers on sapphire substrates von Hardtdegen, H., Kaluza, N., Schmidt, R., Steins, R., Yakovlev, E. V., Talalaev, R. A., Makarov, Yu. N., Zettler, J.-T.

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High growth rate MOVPE of Al(Ga)N in planetary reactor von Lundin, W.V., Nikolaev, A.E., Yagovkina, M.A., Brunkov, P.N., Rozhavskaya, M.M., Ber, B.Ya, Kazantsev, D.Yu, Tsatsulnikov, A.F., Lobanova, A.V., Talalaev, R.A.

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Mechanisms of AlInN growth by MOVPE: modeling and experimental study von Yakovlev, E. V., Lobanova, A. V., Talalaev, R. A., Watson, I. M., Lorenz, K., Alves, E.

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Growth conditions and surface morphology of AlN MOVPE von Lobanova, A.V., Yakovlev, E.V., Talalaev, R.A, Thapa, S.B., Scholz, F.

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Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors von Mazaev, K.M., Lobanova, A.V., Yakovlev, E.V., Talalaev, R.A., Galyukov, A.O., Makarov, Yu.N., Gotthold, D., Albert, B., Kadinski, L., Peres, B.

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Effect of V/III ratio in AlN and AlGaN MOVPE von Lobanova, A.V., Mazaev, K.M., Talalaev, R.A, Leys, M., Boeykens, S., Cheng, K., Degroote, S.

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Kinetics of SiGe chemical vapor deposition from chloride precursors von Lovtsus, A.A., Segal, A.S., Sid’ko, A.P., Talalaev, R.A., Storck, P., Kadinski, L.

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Influence of the reactor inlet configuration on the AlGaN growth efficiency von Yakovlev, E.V., Talalaev, R.A., Kaluza, N., Hardtdegen, H., Bay, H.L.

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Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor von Martin, C., Dauelsberg, M., Protzmann, H., Boyd, A.R., Thrush, E.J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.

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Analysis of gallium nitride growth by gas-source molecular beam epitaxy von Karpov, S.Yu, Makarov, Yu.N, Ramm, M.S, Talalaev, R.A

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Novel approach to simulation of group-III nitrides growth by MOVPE von Karpov, S Yu, Prokofyev, V G, Yakovlev, E V, Talalaev, R A, Makarov, Yu N

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