Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation von Uedono, Akira, Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Imanishi, Masayuki, Ishibashi, Shoji, Mori, Yusuke

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Glycer-AGEs-RAGE signaling enhances the angiogenic potential of hepatocellular carcinoma by upregulating VEGF expression von Takino, Junichi, Yamagishi, Shoichi, Takeuchi, Masayoshi

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Thermodynamic analysis of oxide vapor phase epitaxy of GaN von Sakurai, Yuki, Usami, Shigeyoshi, Imanishi, Masayuki, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Maruyama, Mihoko, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method von Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke

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Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method von Shimizu, Ayumu, Kitamoto, Akira, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method von Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Nobuoka, Masaki, Kitamoto, Akira, Imanishi, Msayuki, Yoshimura, Masashi, Mori, Yusuke

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Influence of oxygen-related defects on the electronic structure of GaN von Ohata, Satoshi, Kawamura, Takahiro, Akiyama, Toru, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Sumi, Tomoaki, Takino, Junichi

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Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy von Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke

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Effect of methane additive on GaN growth using the OVPE method von Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke

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Ras guanyl nucleotide releasing protein 2 affects cell viability and cell-matrix adhesion in ECV304 endothelial cells von Takino, Junichi, Nagamine, Kentaro, Hori, Takamitsu

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Origin of Black Color in Heavily Doped n‐Type GaN Crystal von Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke

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Presence of glyceraldehyde-derived advanced glycation end-products in the liver of insulin-resistant mice von Ebata, Yu, Takino, Junichi, Tsuchiya, Hiroyuki, Sakabe, Tomohiko, Ikeda, Yoshito, Hama, Susumu, Kogure, Kentaro, Takeuchi, Masayoshi, Shiota, Goshi

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Development of ultra-low resistance and low dislocation density GaN substrates and their device applications von Takino, Junichi, Sumi, Tomoaki, Usami, Shigeyoshi, Imanishi, Masayuki, Okayama, Yoshio, Mori, Yusuke

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Polyethylene Glycol Accelerates Loop-mediated Isothermal Amplification (LAMP) Reaction von Nose, Kenta, Nagamine, Kentaro, Tokuda, Junichi, Takino, Junichi, Hori, Takamitsu

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Origin of black color in OVPE-GaN (heavily O-doped GaN) crystals von Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Mori, Yusuke

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Structure analysis of OVPE-grown GaN crystals by using nanobeam X-ray diffraction von Kuritani, Jun, Tohei, Tetsuya, Hamachi, Takeaki, Hayashi, Yusuke, Takino, Junichi, Sumi, Tomoaki, Usami, Shigeyoshi, Imanishi, Masayuki, Mori, Yusuke, Sumitani, Kazushi, Imai, Yasuhiko, Kimura, Shigeru, Sakai, Akira

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Nano-scale structure analysis of bulk GaN crystals grown by OVPE method von Kuritani, Jun, Tohei, Tetsuya, Hamachi, Takeaki, Hayashi, Yusuke, Takino, Junichi, Sumi, Tomoaki, Imanishi, Masayuki, Mori, YUsuke, Sumitani, Sumitani, Imai, Yasuhiko, Kimura, Shigeru, Sakai, Akira

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High-rate growth of the OVPE-GaN crystal by the effect of N2O gas on the suppression of polycrystal formation von Shimizu, Ayumu, Kamiyama, Masahiro, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE CRYSTAL von MATSUNO, SHUNICHI, HOTEIDA, MASAYUKI, TAKINO, JUNICHI

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DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL von MATSUNO, SHUNICHI, HOTEIDA, MASAYUKI, TAKINO, JUNICHI

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