Human trapped in a parked car recognition using thermal image approach von Cheah, S. J., Hussin, R., Kamarudin, A., Mohyar, S. N., Taking, S., Aziz, M. H. A., Kasjoo, S. R.

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16×16 fast signed multiplier using Booth and Vedic architecture von Shing, L. Z., Hussin, R., Kamarudin, A., Mohyar, S. N., Taking, S., Aziz, M. H. A., Ahmad, N.

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The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors von Zulkifeli, M. A., Sabki, S. N., Taking, S., Azmi, N. A., Jamuar, S. S.

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Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium von TAKING, S, BANERJEE, A, DABIRAN, A. M, WOWCHAK, A. M, CUI, B, WASIGE, E, ZHOU, H, LI, X, KHOKHAR, A. Z, OXLAND, R, MCGREGOR, I, BENTLEY, S, RAHMAN, F, THAYNE, I

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AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results von Taking, S., MacFarlane, D., Wasige, E.

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Normally-off GaN HEMT for high power and high-frequency applications von Musa, A. Z., Isa, M. Mohamad, Ahmad, N., Taking, S., Musa, F. A.

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Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator von Zakaria, N.F., Kasjoo, S.R., Zailan, Z., Isa, M.M., Taking, S., Arshad, M.K.M.

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Simulation of unipolar planar device with asymmetrical barrier profile: A planar barrier diode von Zailan, Z., Kasjoo, S. R., Zakaria, N. Fa, Isa, M. M., Arshad, M. K. M., Taking, S.

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AlN/GaN MOS-HEMTs With Thermally Grown \hbox \hbox Passivation von Taking, S, MacFarlane, D, Wasige, E

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Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al 2 O 3 formed by thermal oxidation of evaporated aluminium von Taking, S., Banerjee, A., Zhou, H., Li, X., Khokhar, A.Z., Oxland, R., McGregor, I., Bentley, S., Rahman, F., Thayne, I., Dabiran, A.M., Wowchak, A.M., Cui, B., Wasige, E.

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Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium von Taking, S, Banerjee, A, Zhou, H, Li, X, Khokhar, A Z, Oxland, R, McGregor, I, Bentley, S, Rahman, F, Thayne, I, Dabiran, A M, Wowchak, A M, Cui, B, Wasige, E

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Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film von Irzaman, Irzaman, Darmasetiawan, H., Hardhienata, H., Hikam, M., Arifin, P., Jusoh, S.N., Taking, S., Jamal, Z., Idris, M.A.

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Mechanisms underlying genetic susceptibility to multisystem inflammatory syndrome in children (MIS-C) von Chou, Janet, Platt, Craig D., Habiballah, Saddiq, Nguyen, Alan A., Elkins, Megan, Weeks, Sabrina, Peters, Zachary, Day-Lewis, Megan, Novak, Tanya, Armant, Myriam, Williams, Lucinda, Rockowitz, Shira, Sliz, Piotr, Williams, David A., Randolph, Adrienne G., Geha, Raif S., Almutairi, Abduarahman, Jaber, Faris, Banzon, Tina, Roberts, Jordan, Halyabar, Olha, Lo, Mindy, Kahn, Stacy, Henderson, Lauren A., Lee, Pui Y., Son, Mary Beth, Cheng, Leah

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Small signal and pulse characteristics of AlN/GaN MOS-HEMTs von MacFarlane, D., Taking, S., Murad, S. K., Wasige, E.

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Development of enhancement mode AlGaN/GaN MOS-HEMTs using localized gate-foot oxidation von Banerjee, A, Taking, S, MacFarlane, D, Dabiran, A, Wasige, E

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DC and RF performance of AlN/GaN MOS-HEMTs von Taking, S, MacFarlane, D, Khokhar, A Z, Dabiran, A M, Wasige, E

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New process for low sheet and ohmic contact resistance of AIN/GaN MOS-HEMTs von Taking, S, Khokhar, A Z, MacFarlane, D, Sharabi, S, Dabiran, A M, Wasige, E

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The Physics of Epidemiology von Taking the Fifth

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The opportunities of networks of research-practice partnerships and why CSCL should not give up on large-scale educational change von Hod, Yotam, Sagy, Ornit, Kali, Yael

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the other side of waiting von Thomas, Katie Lloyd

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