High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector von Yoshikawa, Akira, Ushida, Saki, Nagase, Kazuhiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration von Takahashi, Ryo, Fujiki, Ryoto, Hozo, Keisuke, Hiramatsu, Ryoya, Matsukura, Makoto, Kojima, Takahiro, Han, Dong-Pyo, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

Volltext

Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer von Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Tanaka, Shunya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy von Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

Volltext

Lung carcinogenicity of inhaled multi-walled carbon nanotube in rats von Kasai, Tatsuya, Umeda, Yumi, Ohnishi, Makoto, Mine, Takashi, Kondo, Hitomi, Takeuchi, Tetsuya, Matsumoto, Michiharu, Fukushima, Shoji

Volltext

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers von Han, Dong-Pyo, Fujiki, Ryoto, Takahashi, Ryo, Ueshima, Yusuke, Ueda, Shintaro, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy von Yoshikawa, Akira, Nagatomi, Takaharu, Morishita, Tomohiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser von Watanabe, Ruka, Kobayashi, Kenta, Yanagawa, Mitsuki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Kamei, Toshihiro

Volltext

Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition von Miyoshi, Makoto, Nakabayashi, Taiki, Takada, Haruka, Egawa, Takashi, Takeuchi, Tetsuya

Volltext

High-output-power and high-temperature operation of blue GaN-based vertical-cavity surface-emitting laser von Kuramoto, Masaru, Kobayashi, Seiichiro, Akagi, Takanobu, Tazawa, Komei, Tanaka, Kazufumi, Saito, Tatsuma, Takeuchi, Tetsuya

Volltext

Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition von Miyoshi, Makoto, Yamanaka, Mizuki, Egawa, Takashi, Takeuchi, Tetsuya

Volltext

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire von Sato, Kosuke, Yasue, Shinji, Yamada, Kazuki, Tanaka, Shunya, Omori, Tomoya, Ishizuka, Sayaka, Teramura, Shohei, Ogino, Yuya, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

AlGaN-based UV-B laser diode with a high optical confinement factor von Tanaka, Shunya, Ogino, Yuya, Yamada, Kazuki, Omori, Tomoya, Ogura, Reo, Teramura, Shohei, Shimokawa, Moe, Ishizuka, Sayaka, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation von Han, Dong-Pyo, Oh, Chan-Hyoung, Shin, Dong-Soo, Shim, Jong-In, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Volltext

Sub-bandgap optical absorption processes in 300-nm-thick Al1−xInxN alloys grown on a c-plane GaN/sapphire template von Imai, Daichi, Murakami, Yuto, Toyoda, Hayata, Noda, Kouki, Masaki, Kyosuke, Kubo, Kazutoshi, Nomura, Mayu, Miyoshi, Makoto, Miyajima, Takao, Takeuchi, Tetsuya

Volltext

Unique Magnetic Phases in the Skyrmion Lattice and Fermi Surface Properties in Cubic Chiral Antiferromagnet EuPtSi von Kakihana, Masashi, Aoki, Dai, Nakamura, Ai, Honda, Fuminori, Nakashima, Miho, Amako, Yasushi, Takeuchi, Tetsuya, Harima, Hisatomo, Hedo, Masato, Nakama, Takao, Ōnuki, Yoshichika

Volltext

Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition von Miyoshi, Makoto, Nakabayashi, Taiki, Yamanaka, Mizuki, Egawa, Takashi, Takeuchi, Tetsuya

Volltext

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells von Ban, Kazuhito, Yamamoto, Jun-ichi, Takeda, Kenichiro, Ide, Kimiyasu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

Volltext

Nano-height cylindrical waveguide in GaN-based vertical-cavity surface-emitting lasers von Kuramoto, Masaru, Kobayashi, Seiichiro, Akagi, Takanobu, Tazawa, Komei, Tanaka, Hiroki, Takeuchi, Tetsuya

Volltext

Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation von Kondo, Ryosuke, Yabutani, Ayumu, Omori, Tomoya, Yamada, Kazuki, Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki

Volltext