A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance von Takashima, Daisaburo, Nagadomi, Yasushi, Hatsuda, Kosuke, Watanabe, Yohji, Fujii, Shuso

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Realization of New Electronically Controllable Grounded and Floating Simulated Inductance Circuits Using Voltage Differencing Differential Input Buffered Amplifiers von Prasad, Dinesh, Pushkar, K. L., Bhaskar, D. R.

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A 7T-SRAM With Data-Write Technique by Capacitive Coupling von Takashima, Daisaburo, Endo, Masato, Shimazaki, Kazuhiro, Sai, Manabu, Tanino, Masaaki

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Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions von Karsenty, Avraham, Chelly, Avraham

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Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure von Narayanan, M., al-Nashash, Hasan, Mazhari, Baquer, Pal, Dipankar, Chandra, Mahesh

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Cascadable Current-Mode First-Order and Second-Order Multifunction Filters Employing Grounded Capacitors von Horng, Jiun Wei, Hou, Chun-Li, Tseng, Ching-Yao, Chang, Ryan, Yang, Dun-Yih

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Novel Power Reduction Technique for ReRAM with Automatic Avoidance Circuit for Wasteful Overwrite von Kitagawa, Akio, Nakayama, Kazuya, Yoshimoto, Yuhei, Handa, Takaya

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Highly Reliable Reference Bitline Bias Designs for 64 Mb and 128 Mb Chain FeRAMs von Ogiwara, Ryu, Takashima, Daisaburo, Doumae, Sumiko, Shiratake, Shinichiro, Takizawa, Ryousuke, Shiga, Hidehiro

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SEMICONDUCTOR STORAGE DEVICE von TAKASHIMA, Daisaburo

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A 100 MHz Ladder FeRAM Design With Capacitance-Coupled-Bitline (CCB) Cell von Takashima, D, Nagadomi, Y, Ozaki, T

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Nonvolatile semiconductor memory device von Takashima, Daisaburo

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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE von TAKASHIMA, Daisaburo

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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE von TAKASHIMA, Daisaburo

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A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes von Shiga, H., Takashima, D., Shiratake, S., Hoya, K., Miyakawa, T., Ogiwara, R., Fukuda, R., Takizawa, R., Hatsuda, K., Matsuoka, F., Nagadomi, Y., Hashimoto, D., Nishimura, H., Hioka, T., Doumae, S., Shimizu, S., Kawano, M., Taguchi, T., Watanabe, Y., Fujii, S., Ozaki, T., Kanaya, H., Kumura, Y., Shimojo, Y., Yamada, Y., Minami, Y., Shuto, S., Yamakawa, K., Yamazaki, S., Kunishima, I., Hamamoto, T., Nitayama, A., Furuyama, T.

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Three dimensional stacked semiconductor memory von Shiga, Hidehiro, Takashima, Daisaburo

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An Embedded DRAM Technology for High-Performance NAND Flash Memories von Takashima, D., Noguchi, M., Shibata, N., Kanda, K., Sukegawa, H., Fujii, S.

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Memory device von Shiga, Hidehiro, Takashima, Daisaburo

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THREE DIMENSIONAL STACKED SEMICONDUCTOR MEMORY von TAKASHIMA, Daisaburo, SHIGA, Hidehiro

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Nonvolatile memory device von Takashima, Daisaburo

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NONVOLATILE MEMORY DEVICE von TAKASHIMA, Daisaburo

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