Plaque Reduction Neutralization Test (PRNT) in the Congenital Zika Syndrome: Positivity and Associations with Laboratory, Clinical, and Imaging Characteristics von Ribeiro, Marizélia R C, Khouri, Ricardo, Sousa, Patrícia S, Branco, Maria R F C, Batista, Rosângela F L, Costa, Elaine P F, Alves, Maria T S S B, Amaral, Gláucio A, Borges, Marcella C R, Takahasi, Eliana H M, Gomes, Líllian N, Mendes, Ana K T, Cavalcante, Tamires B, Costa, Luciana C, Félix, Alvina C, Souza, Nathalia C S, Silva, Antônio A M

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In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures von Mousley, P. J., Burrows, C. W., Ashwin, M. J., Takahasi, M., Sasaki, T., Bell, G. R.

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In situ X-ray diffraction during stacking of InAs/GaAs(0 0 1) quantum dot layers and photoluminescence spectroscopy von Takahasi, M., Kaizu, T.

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In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001) von Takahasi, M., Nakata, Y., Suzuki, H., Ikeda, K., Kozu, M., Hu, W., Ohshita, Y.

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Orientation dependence of Pd growth on Au electrode surfaces von Takahasi, M, Tamura, K, Mizuki, J, Kondo, T, Uosaki, K

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Quantitative structure determination of GaAs(0 0 1) under typical MBE conditions using synchrotron X-ray diffraction von Takahasi, M., Mizuki, J.

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The physical origin of the InSb(111)A surface reconstruction transient von Proessdorf, A., Rodenbach, P., Grosse, F., Hanke, M., Braun, W., Riechert, H., Hu, W., Fujikawa, S., Kozu, M., Takahasi, M.

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In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots von Takahasi, M., Mizuki, J.

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Pseudomorphic growth of Pd monolayer on Au(111) electrode surface von Takahasi, M., Hayashi, Y., Mizuki, J., Tamura, K., Kondo, T., Naohara, H., Uosaki, K.

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Development of a High-Speed X-Ray Diffraction Method for Observation of Structure Relaxation and Dislocation Creation in III-V Semiconductor Films von Voegeli, W., Arakawa, E., Shirasawa, T., Takahasi, M., Sasaki, T., Matsushita, T.

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Aerodynamic force measurement on a large-scale model in a short duration test facility von Tanno, H., Kodera, M., Komuro, T., Sato, K., Takahasi, M., Itoh, K.

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Structure of GaAs(0 0 1)-c(4 × 4): Comparison of X-ray diffraction and first-principles calculation von Takahasi, M., Kratzer, P., Penev, E., Mizuki, J.

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GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction von Tinkham, B.P., Romanyuk, O., Braun, W., Ploog, K.H., Grosse, F., Takahasi, M., Kaizu, T., Mizuki, J.

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Structure and stability of Pr2O3/Si(0 0 1) heterostructures grown by molecular beam epitaxy using a high temperature effusion source von Tinkham, B P, Takahasi, M, Jenichen, B, Watahiki, T, Braun, W, Ploog, K H

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Darwin's theory for the grazing incidence geometry von Yashiro, W., Ito, Y., Takahasi, M., Takahashi, T.

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23aPS-127 Direct observation of local structure distortion in Pb(Mg_<1/3>Nb_<2/3>)O_3 by X-ray fluorescence holography von Hu, W., Hayashi, K., Happo, N., Ohwada, K., Chen, J., Ye, Z.-G., Hosokawa, S., Takahasi, M.

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Time-resolved X-ray diffraction study on surface structure and morphology during molecular-beam epitaxy growth von Takahasi, M., Yoneda, Y., Inoue, H., Yamamoto, N., Mizuki, J.

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Erratum to “Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy” [J. Cryst. Growth 323 (2011) 13–16] von Sasaki, T., Suzuki, H., Sai, A., Takahasi, M., Fujikawa, S., Kamiya, I., Ohshita, Y., Yamaguchi, M.

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Effect of surface structure on crystal-truncation-rod scattering under the Bragg condition von Takahashi, T., Yashiro, W., Takahasi, M., Kusano, S., Zhang, X. W., Ando, M.

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Element-specific surface X-ray diffraction study of GaAs(001)-c(4 x 4) von Takahasi, Masamitu, Mizuki, Jun'ichiro

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