Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates von Ando, Yuji, Makisako, Ryutaro, Takahashi, Hidemasa, Wakejima, Akio, Suda, Jun

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Erector spinae plane block for low back pain in failed back surgery syndrome: a case report von Takahashi, Hidemasa, Suzuki, Takeo

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RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography von Ando, Yuji, Takahashi, Hidemasa, Makisako, Ryutaro, Wakejima, Akio, Suda, Jun

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Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper von Ando, Yuji, Makisako, Ryutaro, Takahashi, Hidemasa, Wakejima, Akio, Suda, Jun

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Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications von Takahashi, Hidemasa, Ando, Yuji, Tsuchiya, Yoichi, Wakejima, Akio, Hayashi, Hiroaki, Yagyu, Eiji, Kikkawa, Koichi, Sakai, Naoki, Itoh, Kenji, Suda, Jun

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Correlation Between Epitaxial Layer Quality and Drain Current Stability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors von Ando, Yuji, Takenaka, Isao, Takahashi, Hidemasa, Sasaoka, Chiaki

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Anesthesia for patients with PTRF mutations: a case report von Hirano, Atsuko, Takada, Tomohiko, Senda, Mariko, Takahashi, Hidemasa, Suzuki, Takeo

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Therapeutic effects of flurbiprofen axetil on mesenteric traction syndrome: randomized clinical trial von Takahashi, Hidemasa, Shida, Dai, Tagawa, Kyoko, Iwamoto, Ryo, Arita, Makoto, Arai, Hiroyuki, Suzuki, Takeo

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Hemodynamics of mesenteric traction syndrome measured by FloTrac sensor von Takahashi, Hidemasa, MD, Shida, Dai, MD, Tagawa, Kyoko, MD, Suzuki, Takeo, MD

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Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate von Ando, Yuji, Ishikura, Kohji, Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Sasaoka, Chiaki

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Theoretical and Experimental Study of Inverse Piezoelectric Effect in AlGaN/GaN Field-Plated Heterostructure Field-Effect Transistors von Ando, Y., Ishikura, K., Yamanoguchi, K., Asano, K., Takahashi, H.

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Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs von Ando, Yuji, Takahashi, Hidemasa, Makisako, Ryutaro, Wakejima, Akio, Suda, Jun

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A modified anterior approach for ultrasound-guided maxillary nerve block and its application to the mandibular nerve block von Takahashi, Hidemasa, Suzuki, Takeo

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Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs von Ando, Yuji, Takahashi, Hidemasa, Ma, Qiang, Wakejima, Akio, Suda, Jun

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A novel approach for performing ultrasound-guided maxillary nerve block von Takahashi, Hidemasa, Suzuki, Takeo

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Anterior Thoracic Medial Block for Administering Postoperative Analgesia in the Internal Mammary Area von Takahashi, Hidemasa, Suzuki, Takeo

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Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications von Takahashi, Hidemasa, Ando, Yuji, Tsuchiya, Yoichi, Wakejima, Akio, Suda, Jun

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Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices von Sasaoka, Chiaki, Ando, Yuji, Takahashi, Hidemasa, Ikarashi, Nobuyuki, Amano, Hiroshi

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Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer von Ando, Yuji, Oishi, Kensuke, Takahashi, Hidemasa, Makisako, Ryutaro, Wakejima, Akio, Suda, Jun

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Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics von Biswas, Debaleen, Bose, Arijit, Takahashi, Hidemasa, Ando, Yuji, Wakejima, Akio

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