Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response von Takada, Kenshi, Murase, Mikio, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Fujimura, Norifumi, Yoshimura, Takeshi

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Time‐Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films von Takada, Kenshi, Takarae, Shuya, Shimamoto, Kento, Fujimura, Norifumi, Yoshimura, Takeshi

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The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO2-based films von Takada, Kenshi, Saho, Yuki, Yoshimura, Takeshi, Fujimura, Norifumi

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High-power and high-efficiency operation of 1.3 µm-wavelength InP-based photonic-crystal surface-emitting lasers with metal reflector von Itoh, Yuhki, Aoki, Takeshi, Fujii, Kosuke, Yoshinaga, Hiroyuki, Fujiwara, Naoki, Takada, Kenshi, Ogasawara, Makoto, Sawada, Yusuke, Yagi, Hideki, Yanagisawa, Masaki, Yoshida, Masahiro, Inoue, Takuya, Zoysa, Menaka De, Ishizaki, Kenji, Noda, Susumu

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The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO 2 -based films von Takada, Kenshi, Saho, Yuki, Yoshimura, Takeshi, Fujimura, Norifumi

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Time‐Dependent Imprint in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films von Takada, Kenshi, Takarae, Shuya, Shimamoto, Kento, Fujimura, Norifumi, Yoshimura, Takeshi

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Fabrication of Y Doped HfO2 Epitaxial Films Directly on (001) Si Substrate von KAMADA, Daiki, TAKADA, Kenshi, YOSHIMURA, Takeshi, FUJIMURA, Norifumi

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Effect on crystal structure and the dielectric properties of HfO2:Y/Si films by oxygen partial pressure during deposition von Saho, Yuki, Takada, Kenshi, Yoshimura, Takeshi, Fujimura, Norifumi

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Interfacial dielectric properties of Y:HfO2 epitaxial thin films directly on Si substrate von Saho, Yuki, Syuya, Takarae, Kenshi, Takada, Takeshi, Yoshimura, Norifumi, Fujimura

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Time-resolved Simulation of Negative Capacitance Caused by Change in Interface Potential at the Ferroelectric/Semiconductor Hetero-Junction von Takada, Kenshi, Yoshimura, Takeshi, Fujimura, Norifumi

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Time-resolved Simulation of the Negative Capacitance emerging at the Ferroelectric/Semiconductor Hetero-Junction von Takada, Kenshi, Yoshimura, Takeshi, Fujimura, Norifumi

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Prospect of the HfO2 ferroelectric thin films for the use of ferroelectric gate transistor von Fujimura, Norifumi, Takada, Kenshi, Yoshimura, Takeshi

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Transient Negative Capacitance at Ferroelectric/semiconductor Hetero-junction von Takada, Kenshi, Yoshimura, Takeshi, Fujimura, Norifumi

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MULTILAYERED SEMICONDUCTOR OBJECT AND OPTICAL SEMICONDUCTOR ELEMENT von TAKADA Kenshi

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Control of the preferential orientation and the crystal structure of HfO2:Y/Si films by change in oxygen partial pressure von Saho, Yuki, Kamada, Daiki, Takada, Kenshi, Kiriya, Daisuke, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi

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The effect of O2 partial pressure during sputtering on crystal growth and structure of HfO2-based ferroelectric thin films von Takada, Kenshi, Saho, Yuki, Kiriya, Daisuke, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi

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The effect of O2 partial pressure during sputtering on the crystallographic and electrical properties of HfO2-based thin films von Saho, Yuki, Takada, Kenshi, Kiriya, Daisuke, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi

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Emergence of the Negative Capacitanece in Ferroelectric-gate FETs von Takada, Kenshi, Kiriya, Daisuke, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi

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Structural analysis of HfO2 epitaxial thin films on (001)Si substrate von Takada, Kenshi, Kiriya, Daisuke, Yoshimura, Takeshi, Fujimura, Norifumi

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The structual and electrocal properties of HfO2:Y/Si(100) hetero epitaxial films von Kamada, Daiki, Takada, Kenshi, Kiriya, Daisuke, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi

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