Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy von Kitatani, T., Taike, A., Aoki, M.

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Advantage of optical modulators with InGaAlAs/InGaAlAs MQW structure von Shimizu, J, Aoki, M, Tsuchiya, T, Shirai, M, Taike, A, Ohtoshi, T, Tsuji, S

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40 Gbit/s electroabsorption modulators with impedance-controlled electrodes von Shirai, M., Arimoto, H., Watanabe, K., Taike, A., Shinoda, K., Shimizu, J., Sato, H., Ido, T., Tsuchiya, T., Aoki, M., Tsuji, S., Sasada, N., Tada, S., Okayasu, M.

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Optimizing HBr-Br2-H2O etchants to form low defect regrowth interfaces for highly reliable InGaAsP/InP buried-heterostructure lasers von SHINODA, K, TAIKE, A, SATO, H, UCHIYAMA, H

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Optimizing HBr-Br[sub 2]-H[sub 2]O Etchants to Form Low Defect Regrowth Interfaces for Highly Reliable InGaAsP/InP Buried-Heterostructure Lasers von Shinoda, K., Taike, A., Sato, H., Uchiyama, H.

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Control of the II–VI/GaAs interface reaction using hydrogen radical and Zn/As fluxes von Taike, A., Kawata, M., Kikawa, T., Momose, M., Gotoh, J., Nakatsuka, S.

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Disordering of the ZnCdSe single quantum well structure by Cd diffusion von Momose, M., Taike, A., Kawata, M., Gotoh, J., Nakatsuka, S.

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ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy von MIGITA, M, TAIKE, A, YAMAMOTO, H

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p-type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy von TAIKE, A, MIGITA, M, YAMAMOTO, H

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Reliable wide-temperature-range operation of 1.3-μm beam-expander integrated laser diode for passively aligned optical modules von Aoki, M., Komori, M., Sato, H., Tsuchiya, T., Taike, A., Takahashi, M., Uomi, K., Tsuji, S.

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Dependence of ZnTe-based contact structure properties on nitrogen concentration von Taike, A., Momose, M., Kawata, M., Gotoh, J., Mochizuki, K., Nakatsuka, S.

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Highly reliable InGaAsP/InP lasers with defect-free regrowth interfaces formed by newly composed HBr-based solutions von Shinoda, K., Taike, A., Sato, H., Uchiyama, H.

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Improved high-temperature characteristics in a thickness-tapered 1.3-μm beam-expander integrated ridge-waveguide laser von Sato, H., Aoki, M., Tsuchiya, T., Komori, M., Taike, A., Takahashi, M., Uomi, K., Tsuji, S.

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Effect of N-doped ZnTe layers on [formula omitted] graded superlattices von Taike, A., Momose, M., Kawata, M., Gotoh, J., Mochizuki, K.

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Blue-green light-emitting diodes with p-ZnSSe highly doped with nitrogen grown by metalorganic molecular beam epitaxy and molecular beam epitaxy von Migita, M., Taike, A., Momose, M., Gotoh, J.

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Highly reliable 1.3 µm InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning von Sato, H, Tsuchiya, T, Kitatani, T, Taike, A, Uchiyama, H, Shinoda, K, Takahashi, N, Aoki, M

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Highly reliable 1.3 µm InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning von Sato, H., Tsuchiya, T., Kitatani, T., Taike, A., Uchiyama, H., Shinoda, K., Takahashi, N., Aoki, M.

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Highly reliable 1.3 mu m InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning von Sato, H, Tsuchiya, T, Kitatani, T, Taike, A, Uchiyama, H, Shinoda, K, Takahashi, N, Aoki, M

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Silicon shadow-masked MOVPE for InP-based thickness-tapered guided-wave devices von Aoki, M., Komori, M., Sate, H., Taike, A., Uomi, K.

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SINTERING METHOD FOR A TANTALUM CAPACITOR ANODE BLOCK von Taike Technology (Suzhou) Co., Ltd

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