Dislocation generation of GaAs on Si in the cooling stage von TACHIKAWA, M, MORI, H

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Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates von TACHIKAWA, M, YAMAGUCHI, M

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Defect reduction effects in GaAs on Si substrates by thermal annealing von YAMAGUCHI, M, YAMAMOTO, A, TACHIKAWA, M, ITOH, Y, SUGO, M

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Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source von Naritsuka, Shigeya, Nishinaga, Tatau, Tachikawa, Masami, Mori, Hidehumi

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Reduction of dislocation generation for heteroepitaxial III-V/Si by slow cooling von Tachikawa, Masami, Mori, Hidefumi

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Thermal annealing effects of defect reduction in GaAs on Si substrates von YAMAGUCHI, M, TACHIKAWA, M, ITOH, Y, SUGO, M, KONDO, S

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Direct evidence for the DX center being a substitutional donor in AlGaAs alloy system von MIZUTA, M, TACHIKAWA, M, KUKIMOTO, H, MINOMURA, S

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InP layer grown on (001) silicon substrate by epitaxial lateral overgrowth von NARITSUKA, S, NISHINAGA, T, TACHIKAWA, M, MORI, H

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Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates von YAMAGUCHI, M, TACHIKAWA, M, SUGO, M, KONDO, S, ITOH, Y

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1.5 µm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate von Sugo, Mitsuru, Mori, Hidefumi, Itoh, Yoshio, Yoshihisa Sakai, Yoshihisa Sakai, Masami Tachikawa, Masami Tachikawa

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Dislocation generation of III-V semiconductors by the biaxial stress in GaAs/SiO2, InP/SiO2 and III-V/Si structure von TACHIKAWA, M, MORI, H

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Laser-diode-quality InP/Si grown by hydride vapor phase epitaxy von TACHIKAWA, M, YAMADA, T, SASAKI, T, MORI, H, KADOTA, Y

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Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO 2 , InP/SiO 2 and III-V/Si Structure von Masami Tachikawa, Masami Tachikawa, Hidefumi Mori, Hidefumi Mori

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Continuous GaAs film growth on epitaxial Si surface in initial stage of GaAs/Si heteroepitaxy von TACHIKAWA, M, MORI, H, SUGO, M, ITOH, Y

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A simple calculation of the DX center concentration based on an L-donor model von TACHIKAWA, M, MIZUTA, M, KUKIMOTO, H, MINOMURA, S

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Observation of the persistent photoconductivity due to the DX center in GaAs under hydrostatic pressure von TACHIKAWA, M, FUJISAWA, T, KUKIMOTO, H, SHIBATA, A, OOMI, G, MINOMURA, S

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Alloy fluctuation in mixed compound semiconductors as studied by deep level transient spectroscopy von YOSHINO, J, TACHIKAWA, M, MATSUDA, N, MIZUDA, M, KUKIMOTO, H

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Poly-crystalline silicon with large grains deposited from Al–Si melt von Yamada, Takumi, Tachikawa, Masami, Nishioka, Takashi, Yamada, Takeshi

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Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1.55 μm on a Si substrate von SUGO, M, MORI, H, TACHIKAWA, M, ITOH, Y, YAMAMOTO, M

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GaAs heteroepitaxy on an epitaxial Si surface with a low-temperature process von MORI, H, TACHIKAWA, M, SUGO, M, ITOH, Y

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