Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors von Jang, Doyoung, Lee, Jae Woo, Tachi, Kiichi, Montes, Laurent, Ernst, Thomas, Kim, Gyu Tae, Ghibaudo, Gerard

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Effects of N[sub 2]-Based Annealing on the Reliability Characteristics of Tungsten/La[sub 2]O[sub 3]/Silicon Capacitors von Molina, Joel, Tachi, Kiichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi

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Effect of Oxygen for Ultra-Thin La2O3 Film Deposition von Tachi, Kiichi, Iwai, H., Hattori, Takeo, Sugii, Nobuyuki, Tsutsui, Kazuo, Ahemt, Parhat, Kakushima, Kuniyuki

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Electrical Properties of CeOX /La2O3 Stack as a Gate Dielectric for Advanced MOSFET Technology von Kouda, Miyuki, Tachi, Kiichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Chandorkar, Arun, Hattori, Takeo, Iwai, H.

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Improvement of Interface Properties of W/La2O3/Si MOS Structure Using Al Capping Layer von Tachi, Kiichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi

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SEMICONDUCTOR MEMORY DEVICE von TACHI, Kiichi

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Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement von Woo Lee, Jae, Jang, Doyoung, Mouis, Mireille, Tachi, Kiichi, Tae Kim, Gyu, Ernst, Thomas, Ghibaudo, Gérard

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Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure von Nohira, Hiroshi, Matsuda, Toru, Tachi, Kiichi, Shiino, Yasuhiro, Song, Jaeyeol, Kuroki, Yusuke, Ng, Jin Aun, Ahmet, Parhat, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ikenaga, Eiji, Kobayashi, Keisuke, Iwai, H., Hattori, Takeo

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SEMICONDUCTOR STORAGE DEVICE von TACHI, Kiichi

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Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion von Kakushima, K., Okamoto, K., Adachi, M., Tachi, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

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Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film von Kakushima, K., Tachi, K., Song, J., Sato, S., Nohira, H., Ikenaga, E., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

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Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric von KAKUSHIM, K, KOYANAGI, T, TACHI, K, SONG, J, AHMET, P, TSUTSUI, K, SUGII, N, HATTORI, T, IWAI, H

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Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET von Tachi, Kiichi, Vulliet, Nathalie, Barraud, Sylvain, Kakushima, Kuniyuki, Iwai, Hiroshi, Cristoloveanu, Sorin, Ernst, Thomas

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Semiconductor storage device von Tachi, Kiichi, Hirotani, Takashi

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Selection of rare earth silicates for highly scaled gate dielectrics von Kakushima, K., Okamoto, K., Koyanagi, T., Kouda, M., Tachi, K., Kawanago, T., Song, J., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

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Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs von Tachi, Kiichi, Barraud, Sylvain, Kakushima, Kuniyuki, Iwai, Hiroshi, Cristoloveanu, Sorin, Ernst, Thomas

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SEMICONDUCTOR STORAGE DEVICE von TACHI, Kiichi, HIROTANI, Takashi

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME von NIHEI, Ryota, HOSOMURA, Yoshikazu, TACHI, Kiichi

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SEMICONDUCTOR MEMORY DEVICE von TACHI KIICHI

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Memory system for restraining threshold variation to improve data reading von Kojima, Yoshihisa, Tachi, Kiichi, Shirakawa, Masanobu, Takada, Marie, Tokutomi, Tsukasa

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