Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors von Samanta, Arup, Muruganathan, Manoharan, Hori, Masahiro, Ono, Yukinori, Mizuta, Hiroshi, Tabe, Michiharu, Moraru, Daniel

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Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes von Prabhudesai, Gaurang, Muruganathan, Manoharan, Anh, Le The, Mizuta, Hiroshi, Hori, Masahiro, Ono, Yukinori, Tabe, Michiharu, Moraru, Daniel

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Single-electron transport through single dopants in a dopant-rich environment von Tabe, Michiharu, Moraru, Daniel, Ligowski, Maciej, Anwar, Miftahul, Jablonski, Ryszard, Ono, Yukinori, Mizuno, Takeshi

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Transport spectroscopy of coupled donors in silicon nano-transistors von Moraru, Daniel, Samanta, Arup, Anh, Le The, Mizuno, Takeshi, Mizuta, Hiroshi, Tabe, Michiharu

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Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors von Samanta, Arup, Moraru, Daniel, Mizuno, Takeshi, Tabe, Michiharu

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Atom devices based on single dopants in silicon nanostructures von Moraru, Daniel, Udhiarto, Arief, Anwar, Miftahul, Nowak, Roland, Jablonski, Ryszard, Hamid, Earfan, Tarido, Juli Cha, Mizuno, Takeshi, Tabe, Michiharu

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Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes von Tabe, Michiharu, Tan, Hoang Nhat, Mizuno, Takeshi, Muruganathan, Manoharan, Anh, Le The, Mizuta, Hiroshi, Nuryadi, Ratno, Moraru, Daniel

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Electron-tunneling operation of single-donor-atom transistors at elevated temperatures von Hamid, Earfan, Moraru, Daniel, Kuzuya, Youhei, Mizuno, Takeshi, Anh, Le The, Mizuta, Hiroshi, Tabe, Michiharu

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Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope von Nowak, Roland, Moraru, Daniel, Mizuno, Takeshi, Jablonski, Ryszard, Tabe, Michiharu

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Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy von Nowak, Roland, Moraru, Daniel, Mizuno, Takeshi, Jablonski, Ryszard, Tabe, Michiharu

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Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope von Ligowski, Maciej, Moraru, Daniel, Anwar, Miftahul, Mizuno, Takeshi, Jablonski, Ryszard, Tabe, Michiharu

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Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures von Purwiyanti, Sri, Nowak, Roland, Moraru, Daniel, Mizuno, Takeshi, Hartanto, Djoko, Jablonski, Ryszard, Tabe, Michiharu

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Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors von Udhiarto, Arief, Moraru, Daniel, Mizuno, Takeshi, Tabe, Michiharu

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Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires von Moraru, Daniel, Ono, Yukinori, Inokawa, Hiroshi, Tabe, Michiharu

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Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors von Hamid, Earfan, Moraru, Daniel, Tarido, Juli Cha, Miki, Sakito, Mizuno, Takeshi, Tabe, Michiharu

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The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures von The Anh, Le, Moraru, Daniel, Manoharan, Muruganathan, Tabe, Michiharu, Mizuta, Hiroshi

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Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays von Yokoi, Kiyohito, Moraru, Daniel, Mizuno, Takeshi, Tabe, Michiharu

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Single-photon detection by Si single-electron FETs von Tabe, Michiharu, Udhiarto, Arief, Moraru, Daniel, Mizuno, Takeshi

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Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors von Tyszka, Krzysztof, Moraru, Daniel, Samanta, Arup, Mizuno, Takeshi, Jab o ski, Ryszard, Tabe, Michiharu

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Observation of discrete dopant potential and its application to Si single-electron devices von Tabe, Michiharu, Moraru, Daniel, Ligowski, Maciej, Anwar, Miftahul, Yokoi, Kiyohito, Jablonski, Ryszard, Mizuno, Takeshi

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