Low-frequency noise and defects in copper and ruthenium resistors von Fleetwood, D. M., Beyne, S., Jiang, R., Zhao, S. E., Wang, P., Bonaldo, S., McCurdy, M. W., Tőkei, Zs, DeWolf, I., Croes, Kristof, Zhang, E. X., Alles, M. L., Schrimpf, R. D., Reed, R. A., Linten, D.

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Phase identification of self-forming Cu–Mn based diffusion barriers on p-SiOC:H and SiO2 dielectrics using x-ray absorption fine structure von Ablett, J. M., Woicik, J. C., Tőkei, Zs, List, S., Dimasi, E.

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Cobalt and Ruthenium drift in ultra-thin oxides von Tierno, D., Varela Pedreira, O., Wu, C., Jourdan, N., Kljucar, L., Tőkei, Zs, Croes, K.

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Towards understanding intrinsic degradation and breakdown mechanisms in SiOCH low-k dielectrics von Wu, C., Li, Y., Ciofi, I., Kauerauf, Th, Bömmels, J., De Wolf, I., Tőkei, Zs, Croes, K.

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Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials von Wu, C., Li, Y., Leśniewska, A., Varela Pedreira, O., de Marneffe, J.-F., Ciofi, I., Verdonck, P., Baklanov, M. R., Bömmels, J., De Wolf, I., Tőkei, Zs, Croes, K.

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High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5) von Afanas'ev, V. V., Nguyen, A. P. D., Houssa, M., Stesmans, A., Tőkei, Zs, Baklanov, M. R.

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Correlation between field dependent electrical conduction and dielectric breakdown in a SiCOH based low-k (k = 2.0) dielectric von Wu, C., Li, Y., Barbarin, Y., Ciofi, I., Croes, K., Bömmels, J., De Wolf, I., Tőkei, Zs

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Failure mechanisms of PVD Ta and ALD TaN barrier layers for Cu contact applications von Zhao, C., Tőkei, Zs, Haider, A., Demuynck, S.

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Current Understanding of BEOL TDDB Lifetime Models von Croes, K., Wu, C., Kocaay, D., Li, Y., Roussel, Ph, Bömmels, J., Tőkei, Zs

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Ultra-Low Copper Baths for Sub-35 nm Copper Interconnects von Atanasova, T. A., Carbonell, L., Caluwaerts, R., Tőkei, Zs, Strubbe, K., Vereecken, P. M.

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Internal photoemission of electrons at interfaces of metals with low-κ insulators von Shamuilia, S., Afanas’ev, V. V., Somers, P., Stesmans, A., Li, Y.-L., Tőkei, Zs, Groeseneken, G., Maex, K.

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Surface diffusion of copper on tantalum substrates by Ostwald ripening von Fillot, F., Tőkei, Zs, Beyer, G.P.

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Challenges in the implementation of low-k dielectrics in the back-end of line von Hoofman, R.J.O.M., Verheijden, G.J.A.M., Michelon, J., Iacopi, F., Travaly, Y., Baklanov, M.R., Tökei, Zs, Beyer, G.P.

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Electron spin resonance study of defects in low- κ oxide insulators ( κ = 2.5–2.0) von Afanas’ev, V.V., Keunen, K., Stesmans, A., Jivanescu, M., Tőkei, Zs, Baklanov, M.R., Beyer, G.P.

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In-situ scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures von Vanstreels, K., Czarnecki, P., Kirimura, T., Siew, Y. K., De Wolf, I., Bömmels, J., Tőkei, Zs, Croes, K.

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Grain-boundary diffusion in B2 intermetallic compounds : Effect of ordering on diffusion in the Fe3Al and FeCo compounds von TOKEI, Z, BERNARDINI, J, BEKE, D. L

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Study of the effect of dielectric porosity on the stress in advanced Cu/low- k interconnects using x-ray diffraction von Wilson, C. J., Zhao, C., Zhao, L., Metzger, T. H., Tőkei, Zs, Croes, K., Pantouvaki, M., Beyer, G. P., Horsfall, A. B., O'Neill, A. G.

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Low field TDDB of BEOL interconnects using >40 months of data von Croes, K., Roussel, Ph, Barbarin, Y., Wu, C., Li, Y., Bommels, J., Tokei, Zs

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Simulation and measurement of the capacitance benefit of air gap interconnects for advanced technology nodes von Kumaresan, V., Wilson, C.J., Verdonck, P., Van Besien, E., Lazzarino, F., Truffert, V., Bömmels, J., Tokei, Zs, Wong, T.K.S.

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As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability von Tang, B.J., Croes, K., Barbarin, Y., Wang, Y.Q., Degraeve, R., Li, Y., Toledano-Luque, M., Kauerauf, T., Bömmels, J., Tőkei, Zs, De Wolf, I.

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