Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si / SiGe Quantum Wells von Wilamowski, Z., Sandersfeld, N., Jantsch, W., Többen, D., Schäffler, F.

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High temperature subatmospheric chemical vapor deposited undoped silicate glass: A solution for next generation shallow trench isolation von XIA, L.-Q, NEMANI, S, GALIANO, M, PICHAI, S, CHANDRAN, S, YIEH, E, COTE, D, CONTI, R, RESTAINO, D, TÖBBEN, D

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EP.17A.04 Real-World Rates of Infusion-Related Reactions in Patients with EGFR-Mutant NSCLC Receiving Amivantamab von Gupta, D.M., Chang, C., Wendt, L., Mohindra, N., Chae, Y., Tobben, D., Gharzai, L.A., Patel, J.D.

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Transport in silicon/germanium nanostructures von Holzmann, M., Többen, D., Abstreiter, G.

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High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer von Schaffler, F, Tobben, D, Herzog, H -J, Abstreiter, G, Hollander, B

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High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance von Engelhardt, C.M., Többen, D., Aschauer, M., Schäffler, F., Abstreiter, G., Gornik, E.

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Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited) von Schnabel, R.F, Clevenger, L.A, Costrini, G, Dobuzinsky, D.M, Filippi, R, Gambino, J, Lee, G.Y, Iggulden, R.C, Lin, C, Lu, Z.G, Ning, X.J, Ramachandran, R, Ronay, M, Többen, D, Weber, S.J

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Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates von Nützel, J.F., Engelhardt, C.M., Wiesner, R., Többen, D., Holzmann, M., Abstreiter, G.

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Effects of a novel mental skills curriculum on surgical novices' attention von Anton, N.E, Mulji, N, Howley, L.D, Yurco, A.M, Tobben, D, Bean, E, Stefanidis, D

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One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures von Holzmann, M., Többen, D., Abstreiter, G., Wendel, M., Lorenz, H., Kotthaus, J. P., Schäffler, F.

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Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures von Holzmann, M., Többen, D., Baumgartner, P., Abstreiter, G., Kriele, A., Lorenz, H., Schäffler, F.

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Antidot superlattices in two-dimensional hole gases confined in strained germanium layers von Tobben, D, Holzmann, M, Abstreiter, G, Kriele, A, Lorenz, H, Kotthaus, J P, Schaffler, F, Xie, Y H, Silverman, P J, Monroe, D

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High mobility two-dimensional electron gases in Si/Si1-xGex heterostructures grown by MBE von TÖBBEN, D, SCHÄFFLER, F, BESSON, M, ENGELHARDT, C. M, ZRENNER, A, ABSTREITER, G, GORNIK, E

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Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure von Tobben, D, Wharam, D A, Abstreiter, G, Kolthaus, J P, Schaffler, F

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Magnetotransport studies of remote doped Si/Si1-xGex heterostructures grown on relaxed SiGe buffer layers von TÖBBEN, D, SCHÄFFLER, F, ZRENNER, A, ABSTREITER, G

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Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure von Holzmann, M., Többen, D., Abstreiter, G., Schäffler, F.

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In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation von Többen, D., de Vries, D. K., Wieck, A. D., Holzmann, M., Abstreiter, G., Schäffler, F.

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Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures von Többen, D, Holzmann, M, Kühn, S, Lorenz, H, Abstreiter, G, Kotthaus, JP, Schäffler, F

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Quantized conductance in a [formula omitted] split-gate device and impurity-related magnetotransport phenomena von Többen, D, Wharam, D.A, Abstreiter, G, Kotthaus, J.P, Schäffler, F

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Magnetotransport of electrons in arrays of wires in Si/Si 0.7Ge 0.3 heterostructures von Holzmann, M., Többen, D., Baumgartner, P., Abstreiter, G., Kriele, A., Lorenz, H., Schäffler, F.

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