Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures von Yablonskii, G.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Kalisch, H., Szymakowskii, A., Jansen, R.A., Alam, A., Dikme, Y., Schineller, B., Heuken, M.

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High-quality GaN films grown on chemical vapor-deposited graphene films von Chung, Kunook, In Park, Suk, Baek, Hyeonjun, Chung, Jin-Seok, Yi, Gyu-Chul

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Optically pumped lasing properties of InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates von Kushimoto, Maki, Tanikawa, Tomoyuki, Honda, Yoshio, Amano, Hiroshi

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Growth of semipolar high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) von Kushimoto, Maki, Honda, Yoshio, Amano, Hiroshi

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Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si von Lutsenko, E. V., Danilchyk, A. V., Tarasuk, N. P., Andryieuski, A. V., Pavlovskii, V. N., Gurskii, A. L., Yablonskii, G. P., Kalisch, H., Jansen, R. H., Dikme, Y., Schineller, B., Heuken, M.

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Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE von Lutsenko, E. V., Pavlovskii, V. N., Danilchyk, A. V., Osipov, K. A., Rzheutskii, N. V., Zubialevich, V. Z., Gurskii, A. L., Yablonskii, G. P., Malinauskas, T., Jarašiūnas, K., Kazlauskas, K., Juršėnas, S., Miasojedovas, S., Žukauskas, A., Dikme, Y., Kalisch, H., Jansen, R. H., Schineller, B., Heuken, M.

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Stimulated emission and lasing from an Al 0.13 Ga 0.87 N ∕ Ga N double heterostructure grown on a silicon substrate von Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J.

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Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate von Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J.

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Growth, Stimulated Emission, Photo- and Electroluminescence of InGaN/GaN EL-Test Heterostructures von Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Stognij, A.I., Gurskii, A.L., Hryshanau, V.A., Shulenkov, A.S., Yablonskii, G.P., Schön, O., Protzmann, H., Lünenbürger, M., Schineller, B., Dikme, Y., Jansen, R.H., Heuken, M.

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Luminescence Properties of Strained GaN Epilayers and Spatial Configurations of Silicon Impurity and Related Defects von Gurskii, A.L., Lutsenko, E.V., Zelenkovskii, V.M., Bezjazychnaja, T.V., Pavlovskii, V.N., Zubialevich, V.Z., Schineller, B., Schön, O., Yablonskii, G.P., Heuken, M.

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Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates von Kalisch, H., Dikme, Y., Gerstenbrandt, G., Alam, A., Szymakowski, A., Klockenhoff, H., Rieckmann, C., Heuken, M., Jansen, R.H., Javorka, P., Marso, M., Fox, A., Kordos, P., Lüth, H.

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