Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics von Ching-En Chen, Ting-Chang Chang, Bo You, Jyun-Yu Tsai, Wen-Hung Lo, Szu-Han Ho, Kuan-Ju Liu, Ying-Hsin Lu, Xi-Wen Liu, Yu-Ju Hung, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Ching-Sen Lu

Volltext

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors von Dai, Chih-Hao, Chang, Ting-Chang, Chu, Ann-Kuo, Kuo, Yuan-Jui, Ho, Szu-Han, Hsieh, Tien-Yu, Lo, Wen-Hung, Chen, Ching-En, Shih, Jou-Miao, Chung, Wan-Lin, Dai, Bai-Shan, Chen, Hua-Mao, Xia, Guangrui, Cheng, Osbert, Huang, Cheng Tung

Volltext

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 str... von Ho, Szu-Han, Chang, Ting-Chang, Lu, Ying-Hsin, Chen, Ching-En, Tsai, Jyun-Yu, Liu, Kuan-Ju, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Lu, Ching-Sen

Volltext

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation von Wen-hung Lo, Ting-Chang Chang, Chih-Hao Dai, Wan-Lin Chung, Ching-En Chen, Szu-Han Ho, Cheng, Osbert, Cheng Tung Huang

Volltext

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors von Ho, Szu-Han, Chang, Ting-Chang, Wu, Chi-Wei, Lo, Wen-Hung, Chen, Ching-En, Tsai, Jyun-Yu, Liu, Guan-Ru, Chen, Hua-Mao, Lu, Ying-Shin, Wang, Bin-Wei, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Sze, Simon M.

Volltext

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks von Tsai, Jyun-Yu, Chang, Ting-Chang, Chen, Ching-En, Ho, Szu-Han, Liu, Kuan-Ju, Lu, Ying-Hsin, Liu, Xi-Wen, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Lu, Ching-Sen

Volltext

High-k shallow traps observed by charge pumping with varying discharging times von Ho, Szu-Han, Chang, Ting-Chang, Lu, Ying-Hsin, Wang, Bin-Wei, Lo, Wen-Hung, Chen, Ching-En, Tsai, Jyun-Yu, Chen, Hua-Mao, Liu, Kuan-Ju, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Chen, Tsai-Fu, Cao, Xi-Xin

Volltext

On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs von Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Chung Tsai, Szu-Han Ho, Wen-Hung Lo, Guangrui Xia, Cheng, Osbert, Cheng Tung Huang

Volltext

On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs von Chih-Hao Dai, Ting-Chang Chang, An-Kuo Chu, Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung, Jou-Miao Shih, Guangrui Xia, Cheng, Osbert, Cheng-Tung Huang

Volltext

An investigation of total bacterial communities, culturable antibiotic-resistant bacterial communities and integrons in the river water environments of Taipei city von Yang, Chu-Wen, Chang, Yi-Tang, Chao, Wei-Liang, Shiung, Iau-iun, Lin, Han-Sheng, Chen, Hsuan, Ho, Szu-Han, Lu, Min-Jheng, Lee, Pin-Hsuan, Fan, Shao-Ning

Volltext

Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors von Lu, Ying-Hsin, Chang, Ting-Chang, Ho, Szu-Han, Chen, Ching-En, Tsai, Jyun-Yu, Liu, Kuan-Ju, Liu, Xi-Wen, Lin, Chien-yu, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Yen, Wei-Ting

Volltext

Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs von Liu, Kuan-Ju, Chang, Ting-Chang, Yang, Ren-Ya, Chen, Ching-En, Ho, Szu-Han, Tsai, Jyun-Yu, Hsieh, Tien-Yu, Cheng, Osbert, Huang, Cheng-Tung

Volltext

Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors von Dai, Chih-Hao, Chang, Ting-Chang, Chu, Ann-Kuo, Kuo, Yuan-Jui, Lo, Wen-Hung, Ho, Szu-Han, Chen, Ching-En, Shih, Jou-Miao, Chen, Hua-Mao, Dai, Bai-Shan, Xia, Guangrui, Cheng, Osbert, Huang, Cheng Tung

Volltext

Charge trapping induced drain-induced-barrier-lowering in HfO 2 /TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress von Lo, Wen-Hung, Chang, Ting-Chang, Tsai, Jyun-Yu, Dai, Chih-Hao, Chen, Ching-En, Ho, Szu-Han, Chen, Hua-Mao, Cheng, Osbert, Huang, Cheng-Tung

Volltext

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric von Tsai, Jyun-Yu, Chang, Ting-Chang, Lo, Wen-Hung, Chen, Ching-En, Ho, Szu-Han, Chen, Hua-Mao, Tai, Ya-Hsiang, Cheng, Osbert, Huang, Cheng-Tung

Volltext

On the Origin of Anomalous Off-Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure von Chen, Ching-En, Chang, Ting-Chang, Chen, Hua-Mao, You, Bo, Yang, Kai-Hsiang, Ho, Szu-Han, Tsai, Jyun-Yu, Liu, Kuan-Ju, Lu, Ying-Hsin, Hung, Yu-Ju, Tai, Ya-Hsiang, Tseng, Tseung-Yuen

Volltext

Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks von Ho, Szu-Han, Chang, Ting-Chang, Wang, Bin-Wei, Lu, Ying-Shin, Lo, Wen-Hung, Chen, Ching-En, Tsai, Jyun-Yu, Chen, Hua-Mao, Liu, Guan-Ru, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Cao, Xi-Xin

Volltext

Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors von Ho, Szu-Han, Chang, Ting-Chang, Lu, Ying-shin, Lo, Wen-Hung, Chen, Ching-En, Tsai, Jyun-Yu, Chen, Hua-Mao, Wu, Chi-Wei, Luo, Hung-Ping, Liu, Guan-Ru, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Sze, Simon M.

Volltext

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors von Lo, Wen-Hung, Chang, Ting-Chang, Tsai, Jyun-Yu, Dai, Chih-Hao, Chen, Ching-En, Ho, Szu-Han, Chen, Hua-Mao, Cheng, Osbert, Huang, Cheng-Tung

Volltext

Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain von Dai, Chih-Hao, Chang, Ting-Chang, Chu, Ann-Kuo, Kuo, Yuan-Jui, Chen, Shih-Ching, Tsai, Chih-Tsung, Lo, Wen-Hung, Ho, Szu-Han, Xia, Guangrui, Cheng, Osbert, Huang, Cheng Tung

Volltext