Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing von Haugan, H. J., Szmulowicz, F., Elhamri, S.

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Calculation of interface roughness scattering-limited vertical and horizontal mobilities in InAs/GaSb superlattices as a function of temperature von Szmulowicz, F., Brown, G. J.

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Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices von Szmulowicz, F., Elhamri, S., Haugan, H. J., Mitchel, W. C.

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Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices von Haugan, H.J., Mahalingam, K., Szmulowicz, F., Brown, G.J.

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Envelope-function theory without spurious real solutions von Szmulowicz, F

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Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry von Eyink, K. G., Szmulowicz, F., Esposito, D., Grazulis, L., Hill, M., Mahalingam, K., Aronow, A. J.

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Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection von Haugan, H. J., Szmulowicz, F., Brown, G. J., Mahalingam, K.

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Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices von Szmulowicz, F., Elhamri, S., Haugan, H. J., Brown, G. J., Mitchel, W. C.

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Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors von Haugan, H. J., Szmulowicz, F., Mahalingam, K., Brown, G. J., Munshi, S. R, Ullrich, B.

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GaSb for passivating type-II InAs/GaSb superlattice mesas von Szmulowicz, F., Brown, G.J.

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Optimization of mid-infrared InAs∕GaSb type-II superlattices von Haugan, H. J., Szmulowicz, F., Brown, G. J., Mahalingam, K.

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Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors von Haugan, H.J., Elhamri, S., Ullrich, B., Szmulowicz, F., Brown, G.J., Mitchel, W.C.

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Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114 , 053712 (20... von Szmulowicz, F.

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InAs/GaSb type-II superlattices for high performance mid-infrared detectors von Haugan, H.J., Brown, G.J., Szmulowicz, F., Grazulis, L., Mitchel, W.C., Elhamri, S., Mitchell, W.D.

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Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation von Szmulowicz, F., Haugan, H., Brown, G. J.

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Resonant-cavity-enhanced p -type GaAs/AlGaAs quantum-well infrared photodetectors von Shen, A., Liu, H. C., Gao, M., Dupont, E., Buchanan, M., Ehret, J., Brown, G. J., Szmulowicz, F.

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Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors von Haugan, H.J., Szmulowicz, F., Brown, G.J., Ullrich, B., R Munshi, S., Grazulis, L., Mahalingam, K., Fenstermaker, S.T.

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Short-period InAs/GaSb superlattices for mid-infrared photodetectors von Haugan, H. J., Szmulowicz, F., Brown, G. J., Ullrich, B., Munshi, S. R., Wickett, J. C., Stokes, D. W.

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Small atomic clusters as prototypes for sub-nanoscale heterostructure units with pre-designed electronic properties von Pozhar, L. A, Yeates, A. T, Szmulowicz, F, Mitchel, W. C

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Intersubband infrared detector with optimized valence band quantum wells for 3–5 μm wavelength region von Liu, H. C., Szmulowicz, F., Wasilewski, Z. R., Buchanan, M., Brown, G. J.

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