Temperature dependent in situ doping of ALD ZnO von Baji, Zs, Lábadi, Z., Horváth, Z. E., Fried, M., Szentpáli, B., Bársony, I.

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Noise Limitations of the Applications of Miniature Thermal Resistors von Szentpali, B.

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Thermopile antennas for detection of millimeter waves von Szentpáli, B., Basa, P., Fürjes, P., Battistig, G., Bársony, I., Károlyi, G., Berceli, T., Rymanov, V., Stöhr, A.

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Low-Frequency Noise in High-k Gate Dielectric Nanoscale MOSFETs von 한일기, J. I. Lee, A. Chovet, B. Szentpali, H. D. Nam, 최원준

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InP Schottky junctions for zero bias detector diodes von Horváth, Zs.J, Rakovics, V, Szentpáli, B, Püspöki, S, Žd’ánský, K

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Metamaterials: a new concept in the microwave technique von Szentpali, B.

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Evaluation of InP-to-silicon heterobonding von Pasquariello, Donato, Camacho, Martin, Hjort, Klas, Dózsa, László, Szentpáli, Béla

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Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements von Gottwald, P., Riemenschneider, R., Szentpali, B., Hartnagel, H.L., Kincses, Zs, Ruszinko, M.

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Conduction mechanisms in porous Si LEDs von Szentpáli, Béla, Mohácsy, Tibor, Bársony, István

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Point defects generated by direct-wafer bonding of silicon von DOZSA, L, SZENTPALI, B, PASQUARIELLO, D, HJORT, K

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Human exposure to electromagnetic fields from mobile phones von Szentpali, B.

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Schottky junctions on n-type InP for zero bias microwave detectors von Horváth, Zs. J., Rakovics, V., Szentpáli, B., Püspöki, S.

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A study of the profile of the E3 electron trap in GaAs von Kourkoutas, C.D., Kovacs, B., Euthymiou, P.C., Szentpali, B., Somogyi, K., Giakoumakis, G.E.

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Correction of the drift mobility measurements in GaAs MESFETS von Kourkoutas, C.D., Euthymiou, P.C., Szentpali, B., Kovacs, B., Somogyi, K.

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Effect of electron irradiation on the mobility profile in GaAs FATFETs von Szentpali, B., Kovacs, B., Huber, D., Kourkoutas, C.D., Euthymiou, P.C., Zardas, G.E.

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GaAs planar doped barrier diodes von Szentpáli, B., Van Tuyen, Vo, Constantinidis, G., Lagadas, M.

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Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode von Gružinskis, V., Liberis, J., Matulionis, A., Sakalas, P., Starikov, E., Shiktorov, P., Szentpáli, B., Van Tuyen, V., Hartnagel, H. L.

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Engineered Schottky barriers on n-In0.35Ga0.65As von HORVATH, Zs. J, VO VAN TUYEN, FRANCHI, S, BOSACCHI, A, FRIGERI, P, GOMBIA, E, MOSCA, R, PAL, D, KALMAR, I, SZENTPALI, B

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Quasi-optical THz radar and spectroscopy instrumentation based on nonlinear transmission lines MMICs von Dragoman, M., Muller, A., Iordanescu, S., Craciunoiu, F., Rizescu, R., Simon, S., Szentpali, B., Somogyi, K., Riesz, F., Varga, S.

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E-Field probe for measuring the exposure occurred by mobile phones in phantoms von Szentpali, B., Bo Van Tuyen, Thuroczy, G.

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