Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates von Vasiliauskas, R., Marinova, M., Syväjärvi, M., Polychroniadis, E.K., Yakimova, R.

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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers von Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.

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Study of Cucurbit[7]uril nanocoating on epitaxial graphene to design a versatile sensing platform von Trivedi, Maitrayee U., Greczynski, Grzegorz, Kanth P., Chandra, Pandey, Manoj Kumar, Ivanov, Ivan G., Syväjärvi, M., Yazdi, G. Reza

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Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC von Tarekegne, Abebe T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., Ou, H.

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Trends in piezoelectric nanomaterials towards green energy scavenging nanodevices von Singh, P.K., Kaur, G.A., Shandilya, M., Rana, P., Rai, R., Mishra, Y.K., Syväjärvi, M., Tiwari, A.

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Considerably long carrier lifetimes in high-quality 3C-SiC(111) von Sun, J. W., Ivanov, I. G., Liljedahl, R., Yakimova, R., Syväjärvi, M.

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Aligned AlN nanowires by self-organized vapor–solid growth von Yazdi, G R, Persson, P O Å, Gogova, D, Fornari, R, Hultman, L, Syväjärvi, M, Yakimova, R

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ENHANCED ELECTRICAL PROPERTIES OF NONSTRUCTURAL CUBIC SILICON CARBIDE WITH GRAPHENE CONTACT FOR PHOTOVOLTAIC APPLICATIONS von RASHEED, M. N., MARYAM, A., FATIMA, K., IQBAL, F., AFZAL, M., SYVÄJÄRVI, M., MURTAZA, H., ZHU, B., ASGHAR, M.

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The effect of Cl- and N-doped MoS2 and WS2 coated on epitaxial graphene in gas-sensing applications von Kazemi, A., Rodner, M., Fadavieslam, M.R., Kaushik, P.D., Ivanov, Ivan.G., Eriksson, J., Syväjärvi, M., Yakimova, R., Yazdi, G.R.

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Preparation and application of LiSiC-oxide for low temperature solid oxide fuel cells von Maryam, A, Rasheed, M. N., Asghar, M., Fatima, K., Afzal, M., Iqbal, F., Rouf, S A, Syväjärvi, M., Zhu, B.

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Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures von Shtepliuk, I., Khranovskyy, V., Lashkarev, G., Khomyak, V., Lazorenko, V., Ievtushenko, A., Syväjärvi, M., Jokubavicius, V., Yakimova, R.

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Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect von Yang, M, Couturaud, O, Desrat, W, Consejo, C, Kazazis, D, Yakimova, R, Syväjärvi, M, Goiran, M, Béard, J, Frings, P, Pierre, M, Cresti, A, Escoffier, W, Jouault, B

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Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy von Asghar, M., Iqbal, F., Faraz, S., Jokubavicius, V., Wahab, Q., Syväjärvi, M.

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Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds von Hens, P., Jokubavicius, V., Liljedahl, R., Wagner, G., Yakimova, R., Wellmann, P., Syväjärvi, M.

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Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide von Vasiliauskas, R, Mekys, A, Malinovskis, P, Juillaguet, S, Syväjärvi, M, Storasta, J, Yakimova, R

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Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC von Vasiliauskas, R., Mekys, A., Malinovskis, P., Syväjärvi, M., Storasta, J., Yakimova, R.

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Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers von Manolis, G, Gulbinas, K, Grivickas, V, Jokubavičius, V, Linnarsson, M K, Syväjärvi, M

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Towards a quantum resistance standard based on epitaxial graphene von Tzalenchuk, Alexander, Lara-Avila, Samuel, Kalaboukhov, Alexei, Paolillo, Sara, Syväjärvi, Mikael, Yakimova, Rositza, Kazakova, Olga, Janssen, T. J. B. M, Fal'ko, Vladimir, Kubatkin, Sergey

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Nucleation and growth of polycrystalline SiC von Kaiser, M, Schimmel, S, Jokubavicius, V, Linnarsson, M K, Ou, H, Syväjärvi, M, Wellmann, P

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Shockley-Frank stacking faults in 6H-SiC von Sun, J. W., Robert, T., Andreadou, A., Mantzari, A., Jokubavicius, V., Yakimova, R., Camassel, J., Juillaguet, S., Polychroniadis, E. K., Syväjärvi, M.

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