ПЕРСПЕКТИВЫ СОВЕРШЕНСТВОВАНИЯ УГОЛОВНО-ПРОЦЕССУАЛЬНОГО ЗАКОНОДАТЕЛЬСТВА РК ПО ИСПОЛЬЗОВАНИЮ РЕЗУЛЬТАТОВ ОРД В ДОКАЗЫВАНИИ... von A.V. Syrbu, R.N. Sarsenbayev

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Thermal stability of InP-based structures for wafer fused laser diodes von Syrbu, A.V, Behrend, J, Fernandez, J, Carlin, J.F, Berseth, C.-A, Iakovlev, V.P, Rudra, A, Kapon, E

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Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers von Chand, M., Chu, S.N.G., Dutta, N.K., Lopata, J., Geva, M., Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P.

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MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers von Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Jansen, M., Nabiev, R.F.

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Buried heterostructure AlGaAs photonic devices fabricated by low temperature mesa melt etching and regrowth von Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P., Suruceanu, G.I., Lupu, A.T.

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Internal second-harmonic generation in CW AlGaAs SQW lasers: the facet degradation monitoring von Kravetsky, I.V., Kulyuk, L.L., Lupu, A.T., Shutov, D.A., Suruceanu, G.I., Syrbu, A.V., Yakovlev, V.P.

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InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 /spl mu/m von Carlin, J.F., Syrbu, A.V., Berseth, C.A., Behrend, J., Rudra, A., Kapon, E.

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LPE growth effects of InP, In 0.53Ga 0.47As, and In 0.75Ga 0.25As 0.55P 0.45 on structured InP substrates von Chand, N., Syrbu, A.V., Houston, P.A.

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Room-temperature pulsed operation of 1.5 /spl mu/m triple fused vertical cavity surface emitting lasers with in-situ built-in lateral current confinement von Syrbu, A.V., Lakovlev, V.P., Berseth, C.-A., Dehaese, O., Rudra, A., Kapon, E., Stark, C., Boucart, J., Gaborif, F., Jacquet, J.

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LPE growth effects of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.55P0.45 on structured InP substrates von Chand, N., Syrbu, A.V., Houston, P.A.

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Novel InGaAsP/AlGaAs multiple-wavelength electrically pumped vertical cavity lasers emitting in the 1.5 /spl mu/m waveband von Syrbu, A.V., Iakovlev, V., Rudra, A., Berseth, C.-A., Kapon, E., Boucart, J., Sagnes, I.

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Room-Temperature Pulsed Operation of 1.52 /spl mu/m Vertical Cavity Lasers Obtained by Localised Fusion von Syrbu, A.V., Iakovlev, V.P., Berseth, C.-A., Rudra, A., Kapon, E.

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ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and "wallplug" efficiency von Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Boetz, D.

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Optical properties and birefringence of ZnIn2S4 layered crystals von Stamov, I.G., Zalamai, V.V., Syrbu, N.N., Tiron, A.V.

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Up-conversion luminescence in GaSe nanocrystals von Syrbu, N.N., Stamov, I.G., Dorogan, A.V., Zalamai, V.V.

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Оptical properties and electronic band structure of SnS single crystals von Zalamai, V.V., Rusu, E.V., Syrbu, N.N., Tiron, A.V.

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Frenkel excitons and band structure in Sb2S3 single crystals von Beril, S.I., Stamov, I.G., Tiron, A.V., Zalamai, V.V., Syrbu, N.N.

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Sorption of meso-Phenylporphyrin Iodide on Polystyrene–Bentonite Film Composites von Alekseeva, O. V., Rodionova, A. N., Syrbu, S. A., Bagrovskaya, N. A., Noskov, A. V.

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Energetic band structure of Zn3P2 crystals von Stamov, I.G., Syrbu, N.N., Dorogan, A.V.

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Excitonic spectra and energy band structure of ZnAl2Se4 crystals von Syrbu, N.N., Zalamai, V.V., Tiron, A.V., Tiginyanu, I.M.

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