Normal and abnormal domains induced by electron-beam irradiation in Sr0·61Ba0·39Nb2O6 crystals von Kokhanchik, L.S., Bodnarchuk, YaV, Svintsov, A.A., Sirotkin, V.V.

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Betavoltaic battery performance: Comparison of modeling and experiment von Svintsov, A.A., Krasnov, A.A., Polikarpov, M.A., Polyakov, A.Y., Yakimov, E.B.

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Influence of the dose distribution on resist development properties von Knyazev, M.A., Svintsov, A.A., Zaitsev, S.I.

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Fast electron resist contrast determination by “fitting before measurement” approach von Knyazev, M.A., Dubonos, S.V., Svintsov, A.A., Zaitsev, S.I.

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The first synthetic X-ray hologram: results von Firsov, A.A, Svintsov, A.A, Zaitsev, S.I, Erko, A, Aristov, V.V

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How to overcome the principal limitations of SEM columns for the use in e-beam lithography? von Dubonos, S.V., Gaifullin, B.N., Raith, H.R., Svintsov, A.A., Zaitsev, S.I.

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Simulation of heating in powerful electron lithography von Svintsov, A.A, Zaitsev, S.I.

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Effect of resist development process on the determination of proximity function in electron lithography von Babin, S.V., Svintsov, A.A.

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Suppression of thermal spike stimulation at high target temperatures von Maslov, D.L., Svintsov, A.A.

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Direct measurement of thermoeffect influence on resist sensitivity in EBL von Babin, S.V., Kostitsh, I., Svintsov, A.A.

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Evaluation, verification and error determination of proximity parameters α, β and ν in electron beam lithography von Dubonos, S.V., Gaifullin, B.N., Raith, H.F., Svintsov, A.A., Zaitsev, S.I.

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Thin NIL films viscosity and rheological nano-probe von Svintsov, A.A., Trofimov, O.V., Zaitsev, S.I.

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Influence of development parameters on electron resist contrast von Knyazev, M.A., Svintsov, A.A., Zaitsev, S.I.

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Proximity correction for 3D structures von Dubonos, S.V., Gaifullin, B.N., Raith, H.F., Svintsov, A.A., Zaitsev, S.I.

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Guaranteed accuracy of the method of ‘simple’ compensation in electron lithography von Aristov, V.V., Svintsov, A.A., Zaitsev, S.I.

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Proxy — A new approach for proximity correction in electron beam lithography von Aristov, V.V., Erko, A.I., Gaifullin, B.N., Svintsov, A.A., Zaitsev, S.I., Jede, R.R., Raith, H.F.

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Photoelectron exposure of x-ray resists von Aristov, V.V., Kudryashov, V.A., Svintsov, A.A.

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Investigation of structure profiles in negative resists von Aristov, V.V., Borsenko, T.B., Kudryashov, V.A., Svintsov, A.A.

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Precise lithography for component integral optics of nanometer range von Aristov, V.V., Babin, S.V., Davydov, A.V., Erko, A.I., Svintsov, A.A., Redkin, S.V.

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New writing routines for SEM based e-beam lithography von Dubonos, S.V., Raith, H.F., Svintsov, A.A., Zaitsev, S.I.

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