Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy von Boldyrevskii, P. B., Korovin, A. G., Denisov, S. A., Svetlov, S. P., Shengurov, V. G.

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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies von Stepikhova, M.V., Krasil’nikova, L.V., Krasil’nik, Z.F., Shengurov, V.G., Chalkov, V.Yu, Svetlov, S.P., Zhigunov, D.M., Timoshenko, V.Yu, Kashkarov, P.K.

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Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method von Stepikhova, M.V., Andreev, B.A., Shmagin, V.B., Krasil'nik, Z.F., Kuznetsov, V.P., Shengurov, V.G., Svetlov, S.P., Jantsch, W., Palmetshofer, L., Ellmer, H.

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Properties of optically active Si:Er and Si 1− xGe x layers grown by the sublimation MBE method : [Thin Solid Films 369 (2000) 320–323] 1,2 von Stepikhova, M.V., Andreev, B.A., Shmagin, V.B., Krasil'nik, Z.F., Kuznetsov, V.P., Shengurov, V.G., Svetlov, S.P., Jantsch, W., Palmetshofer, L., Ellmer, H.

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Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method von Stepikhova, M.V., Andreev, B.A., Shmagin, V.B., Krasil'nik, Z.F., Kuznetsov, V.P., Shengurov, V.G., Svetlov, S.P., Jantsch, W., Palmetshofer, L., Ellmer, H.

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