Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays von Chernykh, S. V., Chernykh, A. V., Chubenko, A. P., Pavlyuchenko, L. N., Sveshnikov, Yu. N., Glybin, Yu. N., Konovalov, M. P., Panichkin, A. V., Didenko, S. I.

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Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation von Tarasova, E. A., Khananova, A. V., Obolensky, S. V., Zemlyakov, V. E., Sveshnikov, Yu. N., Egorkin, V. I., Ivanov, V. A., Medvedev, G. V., Smotrin, D. S.

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Fast neutron detector based on surface-barrier VPE GaAs structures von Chernykh, A.V., Chernykh, S.V., Didenko, S.I., Koltsov, G.I., Baryshnikov, F.M., Britvich, G.I., Kostin, M.Yu, Chubenko, A.P., Guly, V.G., Sveshnikov, Yu.N., Burtebayev, N., Burtebayeva, J.T.

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Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons von Koltsov, G. I., Didenko, S. I., Chernykh, A. V., Chernykh, S. V., Chubenko, A. P., Sveshnikov, Yu. N.

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Long-term transformation of GaN/Al2O3 defect subsystem induced by weak magnetic fields von Red’ko, R.A., Konakova, R.V., Milenin, V.V., Shvalagin, V.V., Red’ko, S.M., Sveshnikov, Yu.N.

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Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride von Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Klad’ko, V. P., Konakova, R. V., Kudrik, Ya. Ya, Kuchuk, A. V., Milenin, V. V., Sveshnikov, Yu. N., Sheremet, V. N.

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Mechanism of current flow in a Au-Ti-Al-Ti-n+-GaN ohmic contact in the temperature range of 4.2–300 K von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kapitanchuk, L. M., Sheremet, V. N., Sveshnikov, Yu. N., Pilipchuk, A. S.

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Optimization of technology of growing GaN heterostructures with using diffractometry analysis von Ermoshin, I. G., Tsyplenkov, I. N., Sveshnikov, Yu. N.

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Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts von Belyaev, A. E., Boltovets, N. S., Vitusevich, S. A., Ivanov, V. N., Konakova, R. V., Kudryk, Ya. Ya, Lebedev, A. A., Milenin, V. V., Sveshnikov, Yu. N., Sheremet, V. N.

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On the nucleation model for gallium nitride films grown on sapphire von Vigdorovich, E. N., Arendarenko, A. A., Kharlamov, R. V., Sveshnikov, Yu. N.

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AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz von Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.

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Thermodynamic stability of the GaN-InN-AlN system von Vigdorovich, E. N., Sveshnikov, Yu. N.

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Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti-n-GaN von Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Kapitanchuk, L. M., Konakova, R. V., Kudryk, Ya. Ya, Lytvyn, O. S., Milenin, V. V., Sheremet, V. N., Sveshnikov, Yu. N.

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Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire von Klad’ko, V. P., Chornen’kii, S. V., Naumov, A. V., Komarov, A. V., Tacano, M., Sveshnikov, Yu. N., Vitusevich, S. A., Belyaev, A. E.

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Thermal stability of multilayer contacts on gallium nitride von Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Kudryk, Ya. Ya, Lytvyn, P. M., Milenin, V. V., Sveshnikov, Yu. N.

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Mechanism of current flow in a Au--Ti--Al--Ti--[n.sup.+]-GaN ohmic contact in the temperature range of 4.2-300 K von Sachenko, A.V, Belyaev, A.E, Boltovets, N.S, Konakova, R.V, Kapitanchuk, L.M, Sheremet, V.N, Sveshnikov, Yu. N, Pilipchuk, A.S

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Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors von Bespalov, V. A., Vorontsov, A. V., Gorbatsevich, A. A., Egorkin, V. I., Zhigal’skii, G. P., Il’ichev, É. A., Kulakov, A. V., Nalbandov, B. G., Pantuev, V. S., Rasputnyi, V. N., Sveshnikov, Yu. N., Shmelev, S. S.

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Effect of Weak Magnetic Field Treatment on Optical Properties of Epitaxial GaN Films von Red´ko, R.A., Konakova, R.V., Milenin, V.V., Red’ko, S.M., Shvalagin, V.V., Zayats, N.S., Sveshnikov, Yu. N.

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The growth rate of GaN epilayers in HVPE process von Arendarenko, A. A., Vigdorovich, E. N., Sveshnikov, Yu. N.

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Long-term transformation of GaN/Al2O3 defect subsystem induced by weak magnetic fields von RED'KO, R. A, KONAKOVA, R. V, MILENIN, V. V, SHVALAGIN, V. V, RED'KO, S. M, SVESHNIKOV, Yu. N

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