Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization von Svensson, S.P., Donetsky, D., Wang, D., Hier, H., Crowne, F.J., Belenky, G.

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Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range von Segercrantz, N., Yu, K. M., Ting, M., Sarney, W. L., Svensson, S. P., Novikov, S. V., Foxon, C. T., Walukiewicz, W.

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Growth and characterization of highly mismatched GaN1−xSbx alloys von Yu, K. M., Novikov, S. V., Ting, Min, Sarney, W. L., Svensson, S. P., Shaw, M., Martin, R. W., Walukiewicz, W., Foxon, C. T.

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The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants von Sarney, W.L., Svensson, S.P., Anderson, E.M., Lundquist, A.M., Pearson, C., Millunchick, J.M.

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Computer screen as a programmable light source for visible absorption characterization of (bio)chemical assays von Filippini, Daniel, Svensson, Samuel P S, Lundström, Ingemar

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Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices von Lin, Y., Wang, D., Donetsky, D., Belenky, G., Hier, H., Sarney, W. L., Svensson, S. P.

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Multiple Applications of a Novel Biarsenical Imaging Probe in Fluorescence and PET Imaging of Melanoma von Kondrashov, Mikhail, Svensson, Samuel P. S, Ström, Peter, Westermark, Andreas, Jacobson-Ingemyr, Hanna, Takano, Akihiro, Tari, Lenke, Tóth, Miklós, Cai, Minying, Hruby, Victor J, Schou, Magnus

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Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials von Vurgaftman, I., Belenky, G., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Sarney, W. L., Svensson, S. P.

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AZD2184: a radioligand for sensitive detection of β‐amyloid deposits von Johnson, Allan E., Jeppsson, Fredrik, Sandell, Johan, Wensbo, David, Neelissen, Jan A. M., Juréus, Anders, Ström, Peter, Norman, Henrietta, Farde, Lars, Svensson, Samuel P. S.

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Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials von Wang, D., Svensson, S.P., Shterengas, L., Belenky, G.

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Bulk InAsSb with 0.1 eV bandgap on GaAs von Sarney, W. L., Svensson, S. P., Xu, Y., Donetsky, D., Belenky, G.

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Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap von Svensson, S. P., Beck, W. A., Sarney, W. L., Donetsky, D., Suchalkin, S., Belenky, G.

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InAsSb-based heterostructures for infrared light modulation von Donetsky, D., Liu, J., Kipshidze, G., Shterengas, L., Belenky, G., Sarney, W. L., Svensson, S. P.

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Ultra-short period Ga-free superlattice growth on GaSb von Sarney, W. L., Svensson, S. P., Yakes, M. K., Xu, Y., Donetsky, D., Belenky, G.

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Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys von Suchalkin, S, Ludwig, J, Belenky, G, Laikhtman, B, Kipshidze, G, Lin, Y, Shterengas, L, Smirnov, D, Luryi, S, Sarney, W L, Svensson, S P

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Molecular beam epitaxy control and photoluminescence properties of InAsBi von Svensson, S. P., Hier, H., Sarney, W. L., Donetsky, D., Wang, D., Belenky, G.

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Different diagnostic value of risk factors for ACS in relation to initial troponin level and early dynamic change von Alam, R A, Hofmann, R H, Eggers, K E, Berglund, E B, Jernberg, T J, Svensson, P S

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Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb von Sarney, W. L., Svensson, S. P., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Belenky, G.

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Undoped p-type GaN1–xSbx alloys: Effects of annealing von Yu, K M, Mao, S S, Sarney, W L, Svensson, S P, Walukiewicz, W

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Highly mismatched GaN1−xSbx alloys: synthesis, structure and electronic properties von Yu, K M, Sarney, W L, Novikov, S V, Segercrantz, N, Ting, M, Shaw, M, Svensson, S P, Martin, R W, Walukiewicz, W, Foxon, C T

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